A Product Line of Diodes Incorporated ZXMP6A17N8 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast switching speed I D V R (BR)DSS DS(on) Low input capacitance T = 25C A Green component and RoHS compliant (Note 1) 125m V = -10V -3.4A GS Qualified to AEC-Q101 Standards for High Reliability -60V 190m V = -4.5V -2.8A GS Mechanical Data Description and Applications Case: SO-8 Case Material: Molded Plastic, Green Molding Compound. This MOSFET has been designed to minimize the on-state resistance UL Flammability Classification Rating 94V-0 (Note 1) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See diagram below Motor control Terminals: Finish - Matte Tin annealed over Copper lead frame. Backlighting Solderable per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.074 grams (approximate) Power management functions SO-8 D G S Top View Top View Equivalent Circuit Ordering Information (Note 1) Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXMP6A17N8TC See below 13 12 2,500 Notes: 1. Diodes, Inc. defines Green products as those which are RoHS compliant and contain no halogens or antimony compounds further information about Diodes Inc.s Green Policy can be found on our website. For packaging details, go to our website. Marking Information ZXMP = Product Type Marking Code, Line 1 ZXMP 6A17 = Product Type Marking Code, Line 2 YYWW = Date Code Marking 6A17 YY = Year (ex: 09 = 2009) YYWW WW = Week (01 - 53) 1 of 8 March 2010 ZXMP6A17N8 Diodes Incorporated www.diodes.com Document Number DS32076 Rev 1 - 2 ADVANCE INFORMATION A Product Line of Diodes Incorporated ZXMP6A17N8 Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Drain-Source voltage V -60 V DSS Gate-Source voltage V 20 V GS (Note 3) -3.42 Continuous Drain current V = 10V T = 70C (Note 3) I -2.73 A GS A D (Note 2) -2.7 Pulsed Drain current V = 10V (Note 4) I -15.6 A GS DM Continuous Source current (Body diode) (Note 3) I -3.4 A S Pulsed Source current (Body diode) (Note 4) I -15.6 A SM Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Unit 1.56 (Note 2) 12.5 Power dissipation W P D Linear derating factor 2.5 mW/C (Note 3) 20 (Note 2) 80 Thermal Resistance, Junction to Ambient R JA (Note 3) 50 C/W Thermal Resistance, Junction to Lead (Note 5) 32 R JL Operating and storage temperature range T , T -55 to 150 C J STG Notes: 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 3. Same as note (2), except the device is measured at t 10 sec. 4. Same as note (2), except the device is pulsed with D= 0.02 and pulse width 300 s. The pulse current is limited by the maximum junction temperature. 5. Thermal resistance from junction to solder-point (at the end of the drain lead). 2 of 8 March 2010 ZXMP6A17N8 Diodes Incorporated www.diodes.com Document Number DS32076 Rev 1 - 2 ADVANCE INFORMATION