ZXMP7A17GQ Green 70V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I 100% Unclamped Inductive Switch (UIS) Test in Production D V R (BR)DSS DS(on) T = +25C A Low On-Resistance -2.6A Fast Switching Speed 160m V = -10V GS -70V Lead-Free Finish RoHS Compliant (Notes 1 & 2) -1.6A 250m V = -4.5V GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description PPAP Available (Note 4) This MOSFET is designed to minimize on-state resistance and yet maintain superior switching performance, making it ideal for high Mechanical Data efficiency power management applications. Case: SOT223 Case Material: Molded Plastic, Green Molding Compound Applications UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Motor Control Terminals Connections: See Diagram Below Transformer Driving Switch Terminals: Finish - Matte Tin Annealed over Copper Leadframe DC-DC Converters e3 Solderable per MIL-STD-202, Method 208 Power Management Functions Weight: 0.112 grams (Approximate) Uninterrupted Power Supply SOT223 Pin Out - Top Equivalent Circuit Top View View Ordering Information (Notes 4 & 5) Part Number Qualification Case Packaging ZXMP7A17GQTA Automotive SOT223 1,000/Tape & Reel ZXMP7A17GQTC Automotive SOT223 4,000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See ZXMP7A17GQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -70 V DSS Gate-Source Voltage V 20 V GS (Note 7) -3.7 Continuous Drain Current V = -10V T = +70C (Note 7) I -2.9 A GS A D (Note 6) -2.6 Pulsed Drain Current V = -10V (Note 8) I -9.6 A GS DM Continuous Source Current (Body Diode) (Note 7) I -4.8 A S Pulsed Source Current (Body Diode) (Note 8) I -9.6 A SM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 2 (Note 6) Power Dissipation 16 W P D Linear Derating Factor 3.9 mW/C (Note 7) 31 (Note 6) 62.5 Thermal Resistance, Junction to Ambient C/W R JA (Note 7) 34 Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV -70 V I = -250A, V = 0V DSS D GS Zero Gate Voltage Drain Current I -1 A V = -70V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS Gate Threshold Voltage -1 V V I = -250A, V = V GS(th) D DS GS 0.16 V = -10V, I = -2.1A GS D Static Drain-Source On-Resistance (Note 9) R DS(ON) 0.25 V = -4.5V, I = -1.7A GS D Forward Transconductance (Notes 9 & 10) 4.4 S g V = -15V, I = -2.1A fs DS D Diode Forward Voltage (Note 9) V -0.85 -0.95 V I = -2A, V = 0V SD S GS Reverse Recovery Time (Note 10) t 29.8 ns rr I = -2.1A, di/dt= 100A/s S Reverse Recovery Charge (Note 10) Q 38.5 nC rr DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance C 635 pF iss V = -40V, V = 0V DS GS Output Capacitance C 52 pF oss f= 1MHz Reverse Transfer Capacitance C 42.5 pF rss Total Gate Charge (Note 11) 9.6 nC Q V = -5V g GS Total Gate Charge (Note 11) 18 nC Q V = -35V g DS Gate-Source Charge (Note 11) 1.77 nC I = -2.1A Q V = -10V D gs GS Gate-Drain Charge (Note 11) 3.66 nC Q gd Turn-On Delay Time (Note 11) 2.5 ns t D(on) Turn-On Rise Time (Note 11) t 3.4 ns V = -35V, V = -10V r DD GS Turn-Off Delay Time (Note 11) t 27.9 ns I = -1A, R 6 D(off) D G Turn-Off Fall Time (Note 11) t 8 ns f Notes: 6. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 7. Same as Note 6, except the device is measured at t 5 seconds. 8. Same as Note 6, except the device is pulsed with D= 0.05 and pulse width 10s. The pulse current is limited by the maximum junction temperature. 9. Measured under pulsed conditions. Pulse width 300s duty cycle 2%. 10. For design aid only, not subject to production testing. 11. Switching characteristics are independent of operating junction temperatures. 2 of 6 ZXMP7A17GQ March 2015 Diodes Incorporated www.diodes.com Document Number DS36688 Rev. 4 - 2 ADVANCE INFORMATION