ZXMP7A17G Green 70V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I 100% Unclamped Inductive Switch (UIS) Test in Production D V R (BR)DSS DS(on) T = +25C Low On-Resistance A Fast Switching Speed 160m V = -10V -2.6A GS -70V Lead-Free Finish RoHS Compliant (Notes 1 & 2) 250m V = -4.5V -1.6A GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This MOSFET is designed to minimize the on-state resistance and yet Mechanical Data maintain superior switching performance, making it ideal for high Case: SOT223 efficiency power management applications. Case Material: Molded Plastic, Green Molding Compound UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Below Motor Control Terminals: Finish - Matte Tin Annealed over Copper Leadframe Transformer Driving Switch Solderable per MIL-STD-202, Method 208 e3 DC-DC Converters Weight: 0.112 grams (Approximate) Power Management Functions Uninterrupted Power Supply SOT223 Pin Out - Top View Equivalent Circuit Top View Ordering Information (Note 4) Part Number Qualification Case Packaging ZXMP7A17GTA Commercial SOT223 1,000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See ZXMP7A17G Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -70 V DSS Gate-Source Voltage V 20 V GS (Note 6) -3.7 Continuous Drain Current V = -10V T = +70C (Note 6) I -2.9 A GS A D (Note 5) -2.6 Pulsed Drain Current V = -10V (Note 7) I -9.6 A GS DM Continuous Source Current (Body Diode) (Note 6) I -4.8 A S Pulsed Source Current (Body Diode) (Note 7) I -9.6 A SM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 2.0 (Note 5) 16.0 Power Dissipation W P D Linear Derating Factor 3.9 mW/C (Note 6) 31 (Note 5) 62.5 Thermal Resistance, Junction to Ambient C/W R JA (Note 6) 34 Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage -70 V BVDSS ID = -250A, VGS= 0V Zero Gate Voltage Drain Current -1 A I V = -70V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS Gate Threshold Voltage -1.0 V V I = -250A, V = V GS(th) D DS GS 0.16 V = -10V, I = -2.1A GS D Static Drain-Source On-Resistance (Note 8) R DS(ON) 0.25 V = -4.5V, I = -1.7A GS D Forward Transconductance (Notes 8 & 9) g 4.4 S V = -15V, I = -2.1A fs DS D Diode Forward Voltage (Note 8) V -0.85 -0.95 V I = -2.0A, V = 0V SD S GS Reverse recovery time (Note 9) t 29.8 ns rr I = -2.1A, di/dt= 100A/s S Reverse recovery charge (Note 9) Q 38.5 nC rr DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 635 pF iss V = -40V, V = 0V DS GS Output Capacitance C 52 pF oss f= 1MHz Reverse Transfer Capacitance 42.5 pF C rss Total Gate Charge (Note 10) 9.6 nC Q V = -5V g GS Total Gate Charge (Note 10) 18 nC Q V = -35V g DS Gate-Source Charge (Note 10) 1.77 nC Q V = -10V ID= -2.1A gs GS Gate-Drain Charge (Note 10) Q 3.66 nC gd Turn-On Delay Time (Note 10) t 2.5 ns D(on) Turn-On Rise Time (Note 10) t 3.4 ns r V = -35V, V = -10V DD GS Turn-Off Delay Time (Note 10) t 27.9 ns I = -1A, R 6.0 D(off) D G Turn-Off Fall Time (Note 10) t 8 ns f Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 6. Same as Note 5, except the device is measured at t 5 seconds. 7. Same as Note 5, except the device is pulsed with D= 0.05 and pulse width 10s. The pulse current is limited by the maximum junction temperature. 8. Measured under pulsed conditions. Pulse width 300s duty cycle 2%. 9. For design aid only, not subject to production testing. 10. Switching characteristics are independent of operating junction temperatures. 2 of 6 March 2015 ZXMP7A17G Diodes Incorporated www.diodes.com Document Number DS33594 Rev. 5 - 2 ADVANCE INFORMATION