ZXMS6004N8 qDMN2027USS 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage 60V Low Input Current On-State Resistance 500m Logic Level Input (3.3V and 5V) Nominal Load Current (V = 5V) 1.3A Short Circuit Protection with Auto Restart IN Clamping Energy 120mJ Overvoltage Protection (active clamp) Thermal Shutdown with Auto Restart Description Overcurrent Protection Input Protection (ESD) The ZXMS6004N8 is a self-protected low side MOSFET with logic High Continuous Current Rating level input. It integrates over-temperature, overcurrent, overvoltage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) (active clamp) and ESD protected logic level functionality. The Halogen and Antimony Free. Green Device (Note 3) ZXMS6004N8 is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough. Mechanical Data Applications Especially suited for loads with a high in-rush current such as Case: SO-8 lamps and motors Case Material: Molded Plastic, Green Molding Compound All types of resistive, inductive and capacitive loads in switching UL Flammability Classification Rating 94V-0 applications Moisture Sensitivity: Level 1 per J-STD-020 e3 C compatible power switch for 12V and 24V DC applications. Terminals: Matte Tin Finish Replaces electromechanical relays and discrete circuits Weight: 80.2 mg (Approximate) Linear Mode capability - the current-limiting protection circuitry is designed to de-activate at low V to minimize on state power DS dissipation. The maximum DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. This does not S D compromise the products ability to self-protect at low V . DS D SO-8 S D S D IN IN D S Top View Device Symbol Pin Out Top View Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXMS6004N8-13 6004N8 13 12 2,500 units Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU. 2. See ZXMS6004N8 qDMN2027USS Functional Block Diagram Absolute Maximum Ratings ( T = +25C, unless otherwise stated.) A Characteristic Symbol Value Units Continuous Drain-Source Voltage 60 V V DS Drain-Source Voltage for Short Circuit Protection 36 V V DS(SC) Continuous Input Voltage -0.5 to +6 V V IN No limit Continuous Input Current -0.2V V 6V IN I mA IN I 2 Continuous Input Current V < -0.2V or V > 6V IN IN IN Pulsed Drain Current V = 3.3V I 2 A IN DM 2.5 A Pulsed Drain Current V = 5V I IN DM Continuous Source Current (Body Diode) (Note 5) 1 A I S Pulsed Source Current (Body Diode) 5 A I SM Unclamped Single Pulse Inductive Energy, 120 mJ EAS T = +25C, I = 0.5A, V = 24V J D DD Electrostatic Discharge (Human Body Model) V 4,000 V HBM Charged Device Model V 1,000 V CDM Thermal Resistance ( TA = +25C, unless otherwise specified.) Characteristic Symbol Value Units 1.28 W Power Dissipation at T = +25C (Note 5) A P D 10 mW/C Linear Derating Factor 1.65 W Power Dissipation at T = +25C (Note 6) A P D Linear Derating Factor 12.4 mW/C Thermal Resistance, Junction to Ambient (Note 5) R 98 C/W JA Thermal Resistance, Junction to Ambient (Note 6) R 76 C/W JA Thermal Resistance, Junction to Case (Note 7) R 12 C/W JC Operating Temperature Range -40 to +150 C T J Storage Temperature Range -55 to +150 C T STG Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Thermal resistance between junction and the mounting surfaces of drain and source pins. 2 of 8 ZXMS6004N8 August 2015 Diodes Incorporated www.diodes.com Document number: DS38038 Rev. 2 - 2 ADVANCE INFORMATION