ZXMS6004N8Q
qDMN2027USS
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE LOW-SIDE INTELLIFET
Product Summary Features and Benefits
Low Input Current
I
D
V R E Logic Level Input (3.3V and 5V)
DS DS(ON) AS
T = +25C
A
Short Circuit Protection with Auto Restart
Overvoltage Protection (active clamp)
60V 500m 120mJ 1.3A
Thermal Shutdown with Auto Restart
Overcurrent Protection
Input Protection (ESD)
Description
High Continuous Current Rating
The ZXMS6004N8Q is a self-protected low side IntelliFET with logic
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
level input. It integrates over-temperature, overcurrent, overvoltage
Halogen and Antimony Free. Green Device (Note 3)
(active clamp) and ESD protected logic level functionality. The
Characterized to AEC-Q101-006 Grade E for Short-circuit
ZXMS6004N8Q is ideal as a general purpose switch driven from 3.3V
Reliability
or 5V microcontrollers in harsh environments where standard
PPAP Capable (Note 4)
MOSFETs are not rugged enough.
Mechanical Data
Applications
Case: SO-8
Especially Suited for Loads with a High In-rush Current Such As
Case Material: Molded Plastic, Green Molding Compound
Lamps and Motors
UL Flammability Classification Rating 94V-0
All types of resistive, inductive and capacitive loads in switching
Moisture Sensitivity: Level 1 per J-STD-020
applications
e3
Terminals: Matte Tin Finish
C Compatible Power Switch for 12V and 24V DC Applications
Weight: 80.2mg (Approximate)
Replaces electromechanical relays and discrete circuits
Linear Mode capability - the current-limiting protection circuitry is
designed to de-activate at low VDS to minimize on state power
dissipation. The maximum DC operating current is therefore
determined by the thermal capability of the package/board
combination, rather than by the protection circuitry. This does not
compromise the products ability to self-protect at low V .
DS
D
SO-8
S D
S D
IN
S
D
IN
D
S
Top View
Top View
Device Symbol
Pin Out
Ordering Information (Note 5)
Part number Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXMS6004N8Q-13 6004N8 13 12 2,500 units
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
ZXMS6004N8Q
qDMN2027USS
Functional Block Diagram
dV/dt
limitation
Absolute Maximum Ratings (@T = +25C, unless otherwise stated.)
A
Characteristic Symbol Value Units
Continuous Drain-Source Voltage V 60 V
DS
Drain-Source Voltage for Short Circuit Protection V 36 V
DS(SC)
Continuous Input Voltage -0.5 to +6 V
V
IN
No limit
Continuous Input Current @-0.2V V 6V
IN
mA
I
IN
I 2
Continuous Input Current @V < -0.2V or V > 6V IN
IN IN
Pulsed Drain Current @V = 3.3V I 2 A
IN DM
Pulsed Drain Current @V = 5V I 2.5 A
IN DM
Continuous Source Current (Body Diode) (Note 5) I 1 A
S
Pulsed Source Current (Body Diode) I 5 A
SM
Unclamped Single Pulse Inductive Energy,
E 120 mJ
AS
T = +25C, I = 0.5A, V = 24V
J D DD
Electrostatic Discharge (Human Body Model) 4,000 V
V
HBM
Charged Device Model 1,000 V
V
CDM
Thermal Resistance (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Power Dissipation at T = +25C (Note 5) 1.28 W
A
P
D
Linear Derating Factor 10 mW/C
Power Dissipation at T = +25C (Note 6) 1.65 W
A
P
D
12.4 mW/C
Linear Derating Factor
Thermal Resistance, Junction to Ambient (Note 5) 98 C/W
R
JA
Thermal Resistance, Junction to Ambient (Note 6) 76 C/W
R
JA
Thermal Resistance, Junction to Case (Note 7) 12 C/W
R
JC
Operating Temperature Range T -40 to +150 C
J
Storage Temperature Range T -55 to +150 C
STG
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Thermal resistance between junction and the mounting surfaces of drain and source pins.
IntelliFET is a registered trademark of Diodes Incorporated.
2 of 8
ZXMS6004N8Q June 2016
Diodes Incorporated
www.diodes.com
Document number: DS38897 Rev. 2 - 2
ADVANCE INFORMATION