Green ZXMS6004SG 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos Drain Source Voltage 60V Compact High Power Dissipation Package On-State Resistance 500m Low Input Current Nominal Load Current (V = 5V) 1.3A Logic Level Input (3.3V and 5V) IN Clamping Energy 480mJ Short Circuit Protection with Auto Restart Over Voltage Protection (active clamp) Thermal Shutdown with Auto Restart Description Over-Current Protection The ZXMS6004SG is a self protected low side MOSFET with logic Input Protection (ESD) level input. It integrates over-temperature, over-current, over-voltage High Continuous Current Rating (active clamp) and ESD protected logic level functionality. The Lead-Free Finish RoHS compliant (Note 1 & 2) ZXMS6004SG is ideal as a general purpose switch driven from 3.3V Halogen and Antimony Free. Green Device (Note 3) or 5V microcontrollers in harsh environments where standard Qualified to AEC-Q101 Standards for High Reliability MOSFETs are not rugged enough. Mechanical Data Applications Case: SOT223 Especially suited for loads with a high in-rush current such as Case Material: Molded Plastic, Green Molding Compound. lamps and motors. UL Flammability Classification Rating 94V-0 All types of resistive, inductive and capacitive loads in switching Moisture Sensitivity: Level 1 per J-STD-020 applications. Terminals: Matte Tin Finish C compatible power switch for 12V and 24V DC applications Weight: 0.112 grams (approximate) Automotive rated. Replaces electromechanical relays and discrete circuits. Linear Mode capability - the current-limiting protection circuitry is designed to de-activate at low V to minimize on state power DS dissipation. The maximum DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. This does not compromise the products ability to self-protect at low V DS. Top View SOT223 Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXMS6004SGTA ZXMS6004S 7 12 1,000 Note: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See ZXMS6004SG Functional Block Diagram Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Continuous Drain-Source Voltage V 60 V DS Drain-Source Voltage for Short Circuit Protection V 36 V DS(SC) Continuous Input Voltage -0.5 to +6.0 V V IN No limit Continuous Input Current -0.2V V 6V IN I mA IN I 2 Continuous Input Current V < -0.2V or V > 6V IN IN IN Pulsed Drain Current V = 3.3V I 2 A IN DM Pulsed Drain Current V = 5V I 2.5 A IN DM Continuous Source Current (Body Diode) (Note 5) I 1 A S Pulsed Source Current (Body Diode) I 5 A SM Unclamped Single Pulse Inductive Energy, 480 mJ E AS T = +25 C, I = 0.5A, V = 24V J D DD Electrostatic Discharge (Human Body Model) 4000 V V ESD Charged Device Model V 1000 V CDM Notes: 5. For a device surface mounted on 15mm x 15mm single sided 1oz weight copper on 1.6mm FR4 board, in still air conditions. IntelliFET is a registered trademark of Diodes Incorporated. 2 of 9 June 2014 ZXMS6004SG Diodes Incorporated www.diodes.com Document number: DS33610 Rev. 3 - 2 ADVANCE INFORMATION