ZXMS6005N8 qDMN2027US 60V N-CHANNEL SELF-PROTECTED ENHANCEMENT MODE S IntelliFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage: 60V Low Input Current On-State Resistance: 200m Logic Level Input (3.3V and 5V) Nominal Load Current (V = 5V): 2.8A Short Circuit Protection with Auto Restart IN Clamping Energy: 490mJ Overvoltage Protection (Active Clamp) Thermal Shutdown with Auto Restart Overcurrent Protection Description Input Protection (ESD) High Continuous Current Rating The ZXMS6005N8 is a self-protected low side MOSFET with logic Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) level input. It integrates over-temperature, overcurrent, overvoltage Halogen and Antimony Free. Green Device (Note 3) (active clamp) and ESD protected logic level functionality. The ZXMS6005N8 is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough. Applications Mechanical Data Especially Suited for Loads with a High In-Rush Current such as Case: SO-8 Lamps and Motors Case Material: Molded Plastic, Green Molding Compound. All Types of Resistive, Inductive and Capacitive Loads in UL Flammability Classification Rating 94V-0 Switching Applications Moisture Sensitivity: Level 1 per J-STD-020 C Compatible Power Switch for 12V and 24V DC Applications Terminals: Matte Tin Finish Replaces Electromechanical Relays and Discrete Circuits Weight: 80.2 mg (Approximate) Linear Mode Capability the current-limiting protection circuitry is designed to deactivate at low V to minimize on-state power DS dissipation. The maximum DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. This does not compromise the products ability to self-protect at low V . DS S D D SO-8 D S IN S D IN D S Top View Device Symbol Top View Pin Out Ordering Information Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel ZXMS6005N8-13 6005N8 13 12 2,500 Units Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZXMS6005N8 qDMN2027US S Functional Block Diagram Absolute Maximum Ratings ( T = +25C, unless otherwise stated.) A Characteristic Symbol Value Units Continuous Drain-Source Voltage 60 V V DS Drain-Source Voltage for Short Circuit Protection 36 V V DS(SC) Continuous Input Voltage -0.5 to +6 V V IN No Limit Continuous Input Current -0.2V V 6V IN I mA IN I 2 Continuous Input Current V < -0.2V or V > 6V IN IN IN Pulsed Drain Current V = 3.3V I 5 A IN DM Pulsed Drain Current V = 5V I 6 A IN DM Continuous Source Current (Body Diode) (Note 5) 2.5 A I S Pulsed Source Current (Body Diode) 10 A I SM Unclamped Single Pulse Inductive Energy, E 490 mJ AS T = +25C, I = 0.5A, V = 24V J D DD Electrostatic Discharge (Human Body Model) V 4,000 V HBM Charged Device Model V 1,000 V CDM Thermal Resistance ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units 1.28 W Power Dissipation T = +25C (Note 5) A P D 10 mW/C Linear Derating Factor Power Dissipation T = +25C (Note 6) 1.65 W A P D Linear Derating Factor 12.4 mW/C Thermal Resistance, Junction to Ambient (Note 5) R 98 C/W JA Thermal Resistance, Junction to Ambient (Note 6) R 76 C/W JA Thermal Resistance, Junction to Case (Note 7) R 12 C/W JC Operating Temperature Range -40 to +150 C T J Storage Temperature Range -55 to +150 C T STG Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Thermal resistance between junction and the mounting surfaces of drain and source pins. 2 of 8 ZXMS6005N8 December 2015 Diodes Incorporated www.diodes.com Document number: DS38473 Rev. 2 - 2 ADVANCE INFORMATION