ZXT13N50DE6 Diodes Incorporated

ZXT13N50DE6 SuperSOT4 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY V =50V R = 36m I = 4A CEO SAT C DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. SOT23-6 FEATURES Extremely Low Equivalent On Resistance Extremely Low Saturation Voltage h characterised up to 10A FE I =4A Continuous Collector Current C SOT23-6 package APPLICATIONS DC - DC Converters Power Management Functions Power switches Motor control C C ORDERING INFORMATION C C DEVICE REEL SIZE TAPE WIDTH QUANTITY (inches) (mm) PER REEL B E ZXT13N50DE6TA 7 8mm embossed 3000 units Top View ZXT13N50DE6TC 13 8mm embossed 10000 units DEVICE MARKING N50D ISSUE 1 - NOVEMBER 1999 1ZXT13N50DE6 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Collector-Base Voltage V 100 V CBO Collector-Emitter Voltage V 50 V CEO Emitter-Base Voltage V 7.5 V EBO Peak Pulse Current I 10 A CM Continuous Collector Current I 4A C Base Current I 500 mA B Power Dissipation at TA=25C (a) P 1.1 W D 8.8 mW/C Linear Derating Factor Power Dissipation at TA=25C (b) P 1.7 W D 13.6 mW/C Linear Derating Factor Operating and Storage Temperature Range T :T -55 to +150 C j stg THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R 113 C/W JA Junction to Ambient (b) R 73 C/W JA NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs. ISSUE 1 - NOVEMBER 1999 2