ZXT4M322TA Diodes Incorporated

ZXT4M322 TM MPPS Miniature Package Power Solutions 70V PNP LOW SATURATION TRANSISTOR SUMMARY PNP V = -70V R = 117m I = -2.5A CEO SAT C DESCRIPTION Packaged in the new innovative 2mm x 2mm MLP (Micro Leaded Package) outline, this new 4th generation low saturation PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Additionally users gain several other key benefits: Performance capability equivalent to much larger packages Improved circuit efficiency & power levels PCB area and device placement savings Lower Package Height (0.9mm nom) Reduced component count FEATURES Low Equivalent On Resistance Extremely Low Saturation Voltage (-220mV max 1A) h specified up to 3A FE I =2.5A Continuous Collector Current C 2mm x 2mm MLP APPLICATIONS DC - DC Converters DC - DC Modules Power switches Motor control ORDERING INFORMATION DEVICE REEL TAPE QUANTITY SIZE WIDTH PER REEL ZXTD4M322TA 7 8mm 3000 ZXTD4M322TC 13 8mm 10000 Underside View DEVICE MARKING S4 ISSUE 1 - JUNE 2003 1 SEMICONDUCTORS MLP322ZXT4M322 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Collector-Base Voltage V -70 V CBO Collector-Emitter Voltage V -70 V CEO Emitter-Base Voltage V -7.5 V EBO Peak Pulse Current I -3 A CM (a) Continuous Collector Current I -2.5 A C Base Current I -1000 mA B (a) Power Dissipation at TA=25C P 1.5 W D Linear Derating Factor 12 mW/ C (b) Power Dissipation at TA=25C P 2.45 W D Linear Derating Factor 19.6 mW/ C (d) Power Dissipation at TA=25C P 1 W D Linear Derating Factor 8 mW/ C (e) Power Dissipation at TA=25C P 3 W D Linear Derating Factor 24 mW/ C Operating & Storage Temperature Range T :T -55 to +150 C j stg Junction Temperature T 150 C j THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT (a) Junction to Ambient R 83 C/W JA (b) Junction to Ambient R 51 C/W JA (d) Junction to Ambient R 125 C/W JA (e) Junction to Ambient R 42 C/W JA NOTES (a) For a single device surface mounted on 10 sq cm 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached. (b) For a single device surface mounted on 10 sq cm 1oz copper on FR4 PCB, in still air conditions measured at t 5 secs with all exposed pads attached. (c) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph. (d) For a single device surface mounted on 10 sq cm 1oz copper FR4 PCB, in still air conditions with minimal lead connections only. (e) For a single device surface mounted on 65 sq cm 2oz copper FR4 PCB, in still air conditions with all exposed pads attached. (f) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device, as shown in the package dimensions data. The thermal resistance for a device mounted on 1.5mm thick FR4 board using minimum copper of 1oz weight and 1mm wide tracks is Rth= 300C/W giving a power rating of Ptot=420mW ISSUE 1 - JUNE 2003 2 SEMICONDUCTORS