ZXTC2045E6 Diodes Incorporated

ZXTC2045E6 Dual 40V complementary transistors in SOT23-6 Summary BV = 40V CEV BV = 30V CEO Features 40V complementary device Up to 5 amps peak current C1 C2 High h FE SOT236 package B1 B2 Applications MOSFET and IGBT gate driving E1 E2 Ordering information Device Reel size Tape width Quantity per reel ZXTC2045E6TA 7 8mm embossed 3,000 ZXTC2045E6TC 13 8mm embossed 10,000 Device marking Pin out - top view 2045 Issue 1 - January 2006 1 www.zetex.com Zetex Semiconductors plc 2006ZXTC2045E6 Absolute maximum ratings (each transistor) Parameter Symbol Limit Unit NPN PNP Collector-base voltage BV 40 -40 V CBO Collector-emitter voltage BV 40 -40 V CEV Collector-emitter voltage BV 30 -30 V CEO Emitter-base voltage BV 7-7 V EBO Peak pulse current I 5-5 A CM (a) I 1.5 -1.5 A Continuous collector current C Base current I 1-1 A B (a) (c) P 0.9 W Power dissipation at T =25 C D A 7.2 mW/C Linear derating factor (a) (d) P 1.1 W Power dissipation at T =25 C D A 8.8 mW/C Linear derating factor (b) (c) P 1.7 W Power dissipation at T =25 C D A 13.6 mW/C Linear derating factor Operating and storage temperature range T , T -55 to +150 C j stg Thermal resistance Parameter Symbol Value Unit (a) (c) R 139 C/W JA Junction to ambient (b) (c) R 73 C/W Junction to ambient JA (a) (d) R 113 C/W Junction to ambient JC NOTES: (a) For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) As above measured at t < 5 seconds. (c) For device with one active die. (d) For device with two active dice running at equal power. Issue 1 - January 2006 2 www.zetex.com Zetex Semiconductors plc 2006