A Product Line of Diodes Incorporated ZXTC2045E6 30V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26 Features Mechanical Data NPN + PNP Combination Case: SOT26 BV > 30 (-30)V CEO Case Material: Molded Plastic, Green Molding Compound BV > 40 (-40)V CEV UL Flammability Classification Rating 94V-0 ICM = 5 (-5)A Peak Pulse Current Moisture Sensitivity: Level 1 per J-STD-020 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Terminals: Finish Matte Tin Plated Leads Solderable per Halogen and Antimony Free. Green Device (Note 3) MIL-STD-202, Method 208 Qualified to AEC-Q101 Standards for High Reliability Weight: 0.015 grams (Approximate) PPAP Capable (Note 4) Description Applications Advanced process capability is used to achieve this high performance MOSFET and IGBT Gate Driving device. Combining NPN and PNP transistors, the SOT26 package Motor Drive provides a compact solution for the intended applications. SOT26 C1 C2 C1 E1 B1 B2 B1 B2 C2 E2 Q1 Q2 E1 E2 Top View Device Symbol Top View Pin-Out Ordering Information (Notes 4 & 5) Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTC2045E6TA AEC-Q101 2045 7 8 3,000 ZXTC2045E6QTA Automotive 2045 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See A Product Line of Diodes Incorporated ZXTC2045E6 Absolute Maximum Ratings Q1 (NPN Transistor) ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V 40 V CBO Collector-Emitter Voltage V 40 V CEV Collector-Emitter Voltage V 30 V CEO Emitter-Base Voltage V 7 V EBO Continuous Collector Current I 1.5 A C Peak Pulsed Collector Current I 5 A CM Base Current 1 A I B Absolute Maximum Ratings Q2 (PNP Transistor) ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage -40 V V CBO Collector-Emitter Voltage -40 V V CEV Collector-Emitter Voltage -30 V V CEO Emitter-Base Voltage -7 V V EBO Continuous Collector Current -1.5 A I C Peak Pulsed Collector Current I -5 A CM Base Current I -1 A B Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 0.7 (Notes 6 & 10) 5.6 0.9 (Notes 7 & 10) 7.2 Power Dissipation 1.1 W (Notes 7 & 11) P D Linear Derating Factor 8.8 mW/C 1.1 (Notes 8 & 10) 8.8 1.7 (Notes 9 & 10) 13.6 (Notes 6 & 10) 179 (Notes 7 & 10) 139 Thermal Resistance, Junction to Ambient (Notes 7 & 11) 113 R JA C/W (Notes 8 & 10) 113 (Notes 9 & 10) 73 Thermal Resistance, Junction to Lead (Note 12) R 95.50 JL Operating and Storage Temperature Range T , T -55 to +150 C J STG ESD Ratings (Note 13) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 6. For a device surface mounted on 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 7. Same as Note 6, except the device is surface mounted on 25mm x 25mm 1oz copper. 8. Same as Note 6, except the device is surface mounted on 50mm x 50mm 2oz copper. 9. Same as Note 8, except the device is measured at t < 5 seconds. 10. For device with one active die, both collectors attached to a common heatsink. 11. For device with two active die running at equal power, split heatsink 50% to each collector. 12. Thermal resistance from junction to solder-point (at the end of the collector lead). 13. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 6 March 2015 ZXTC2045E6 Diodes Incorporated www.diodes.com Document Number: DS33645 Rev: 3 - 2 ADVANCE INFORMATION