ZXTC2061E6 12V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26 Features Mechanical Data NPN + PNP Combination Case: SOT26 BV > 12 (-12)V Case Material: Molded Plastic, Green Molding Compound CEO BV > 7 (-7)V UL Flammability Classification Rating 94V-0 EBO Continuous Collector Current I = 5 (-3.5)A Moisture Sensitivity: Level 1 per J-STD-020 C V < 32 (-70)mV 1A Terminals: Finish Matte Tin Plated Leads, Solderable per CE(sat) R = 25 (45)m MIL-STD-202, Method 208 CE(sat) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Weight: 0.015 grams (Approximate) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Applications MOSFET and IGBT Gate Driving Advanced process capability has been used to achieve this high Motor Drive performance device. Combining NPN and PNP transistors in the SOT26 package provides a compact solution for the intended applications. C1 C2 SOT26 C1 E1 B1 B2 B1 B2 C2 E2 Q1 Q2 E1 E2 Top View Top View Device Symbol Pin-Out Ordering Information (Note 4) Product Complianace Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTC2061E6TA AEC-Q101 2061 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZXTC2061E6 Absolute Maximum Ratings Q1 (NPN Transistor) ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V 20 V CBO Collector-Emitter Voltage V 12 V CEO Emitter-Base Voltage V 7 V EBO Continuous Collector Current I 5 A C Peak Pulsed Collector Current 12 A I CM Base Current 1 A I B Absolute Maximum Ratings Q2 (PNP Transistor) ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage -12 V V CBO Collector-Emitter Voltage -12 V V CEO Emitter-Base Voltage -7 V V EBO Continuous Collector Current -3.5 A I C Peak Pulsed Collector Current I -10 A CM Base Current I -1 A B Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 0.7 (Notes 5 & 9) 5.6 0.9 (Notes 6 & 9) 7.2 Power Dissipation 1.1 W (Notes 6 & 10) P D Linear Derating Factor 8.8 mW/C 1.1 (Notes 7 & 9) 8.8 1.7 (Notes 8 & 9) 13.6 (Notes 5 & 9) 179 (Notes 6 & 9) 139 Thermal Resistance, Junction to Ambient (Notes 6 & 10) R 113 JA C/W (Notes 7 & 9) 113 (Notes 8 & 9) 73 Thermal Resistance, Junction to Lead (Note 11) 87.58 R JL Operating and Storage Temperature Range -55 to +150 C T , T J STG ESD Ratings (Note 12) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device surface mounted on 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 6. Same as Note 5, except the device is surface mounted on 25mm x 25mm 1oz copper. 7. Same as Note 5, except the device is surface mounted on 50mm x 50mm 2oz copper. 8. Same as Note 7, except the device is measured at t < 5 seconds. 9. For device with one active die, both collectors attached to a common heatsink. 10. For device with two active dice running at equal power, split heatsink 50% to each collector. 11. Thermal resistance from junction to solder-point (at the end of the collector lead). 12. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 8 ZXTC2061E6 November 2015 Diodes Incorporated www.diodes.com Document Number: DS33646 Rev: 3 - 2 ADVANCE INFORMATION