A Product Line of Diodes Incorporated ZXTC6717MC COMPLEMENTARY 15V NPN & 12V PNP LOW SATURATION TRANSISTOR Features Mechanical Data NPN Transistor Case: W-DFN3020-8 Type B BV > 15V CEO Nominal package height: 0.8mm I = 4.5A Continuous Collector Current C Case material: molded plastic. Green molding compound. Low Saturation Voltage (100mV max 1A) UL Flammability Rating 94V-0 R = 45m for a low equivalent On-Resistance SAT Moisture Sensitivity: Level 1 per J-STD-020 PNP Transistor Terminals: Finish - NiPdAu, Solderable per MIL-STD-202, BV > -12V CEO e4 Method 208 I = -4A Continuous Collector Current C Weight: 0.013 grams (approximate) Low Saturation Voltage (-140mV max -1A) R = 60m for a low equivalent On-Resistance SAT h characterized up to 12A for high current gain hold up FE Applications Low profile 0.8mm high package for thin applications DC DC Converters R efficient, 40% lower than SOT26 JA 2 Charging circuits 6mm footprint, 50% smaller than TSOP6 and SOT26 Power switches Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Motor control Qualified to AEC-Q101 Standards for High Reliability LED Backlighting circuits PPAP capable (Note 4) Portable applications C1 C2 W-DFN3020-8 C2 C2 C1 C1 Type B B1 B2 C1 C2 E2 B2 E1 B1 E1 E2 Pin 1 Top View Bottom View NPN Transistor PNP Transistor Bottom View Pin-Out Ordering Information (Note 4 & 5) Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTC6717MCTA AEC-Q101 DA1 7 8 3,000 ZXTC6717MCQTA Automotive DA1 7 8 3,000 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See A Product Line of Diodes Incorporated ZXTC6717MC Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol NPN PNP Unit Collector-Base Voltage V 40 -20 V CBO Collector-Emitter Voltage V 15 -12 V CEO Emitter-Base Voltage V 7 -7 V EBO Peak Pulse Current I 15 -12 A CM (Notes 6 & 9) 4.5 -4 Continuous Collector Current I A C (Notes 7 & 9) 5 -4.45 Base Current I 1 A B Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol NPN PNP Unit 1.5 (Notes 6 & 9) 12 2.45 (Notes 7 & 9) 19.6 W Power Dissipation P D Linear Derating Factor 1.13 mW/C (Notes 8 & 9) 8 1.7 (Notes 8 & 10) 13.6 (Notes 6 & 9) 83.3 (Notes 7 & 9) 51.0 Thermal Resistance, Junction to Ambient R JA (Notes 8 & 9) 111 C/W (Notes 8 & 10) 73.5 Thermal Resistance, Junction to Lead (Notes 9 & 11) 17.1 R JL Operating and Storage Temperature Range T , T -55 to +150 C J STG 2 Notes: 6. For a dual device surface mounted on 28mm x 28mm (8cm ) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions the device is measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector pads connected to each half. 7. Same as note (6), except the device is measured at t <5 sec. 2 8. Same as note (6), except the device is surface mounted on 31mm x 31mm (10cm ) FR4 PCB with high coverage of single sided 1oz copper. 9. For a dual device with one active die. 10. For dual device with 2 active die running at equal power. 11. Thermal resistance from junction to solder-point (on the exposed collector pads). ZXTC6717MC 2 of 9 October 2012 Document number: DS31926 Rev. 4 - 2 Diodes Incorporated www.diodes.com