A Product Line of Diodes Incorporated ZXTC6718MC COMPLEMENTARY 20V LOW SATURATION TRANSISTORS Features Mechanical Data NPN Transistor Case: W-DFN3020-8 Type B BV > 20V CEO Nominal package height: 0.8mm I = 4.5A Continuous Collector Current C Case material: molded plastic. Green molding compound. Low Saturation Voltage (150mV max 1A) UL Flammability Rating 94V-0 R = 47m for a low equivalent On-Resistance SAT Moisture Sensitivity: Level 1 per J-STD-020 PNP Transistor Terminals: Finish - NiPdAu, Solderable per MIL-STD-202, BV > -20V CEO e4 Method 208 I = -3.5A Continuous Collector Current C Weight: 0.013 grams (approximate) Low Saturation Voltage (-220mV max -1A) R = 64m for a low equivalent On-Resistance SAT h characterized up to 6A for high current gain hold up FE Applications Low profile 0.8mm high package for thin applications DC DC Converters R efficient, 40% lower than SOT26 JA 2 Charging circuits 6mm footprint, 50% smaller than TSOP6 and SOT26 Power switches Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Motor control Qualified to AEC-Q101 Standards for High Reliability LED Backlighting circuits PPAP capable (Note 4) Portable applications C1 C2 W-DFN3020-8 Type B C2 C2 C1 C1 B1 B2 C1 C2 E2 B2 E1 B1 E1 E2 Pin 1 Top View Bottom View NPN Transistor PNP Transistor Bottom View Pin-Out Equivalent Circuit Ordering Information (Note 4 & 5) Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTC6718MCTA AEC-Q101 DB2 7 8 3,000 ZXTC6718MCQTA Automotive DB2 7 8 3,000 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See A Product Line of Diodes Incorporated ZXTC6718MC Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol NPN PNP Unit Collector-Base Voltage 40 -25 V V CBO Collector-Emitter Voltage 20 -20 V V CEO Emitter-Base Voltage 7 -7 V V EBO Peak Pulse Current 12 -6 A I CM Continuous Collector Current (Notes 6 & 9) 4.5 -3.5 I A C Continuous Collector Current (Notes 7 & 9) 5 -3.8 Base Current 1 A I B Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol NPN PNP Unit 1.5 (Notes 6 & 9) 12 2.45 (Notes 7 & 9) Power Dissipation 19.6 W P D Linear Derating Factor mW/C 1.13 (Notes 8 & 9) 8 1.7 (Notes 8 & 10) 13.6 (Notes 6 & 9) 83.3 (Notes 7 & 9) 51.0 Thermal Resistance, Junction to Ambient R JA (Notes 8 & 9) 111 C/W (Notes 8 & 10) 73.5 Thermal Resistance, Junction to Lead (Notes 9 & 11) R 17.1 JL Operating and Storage Temperature Range T , T -55 to +150 C J STG 2 Notes: 6. For a dual device surface mounted on 28mm x 28mm (8cm ) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions the device is measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector pads connected to each half. 7. Same as note (6), except the device is measured at t <5 sec. 2 8. Same as note (6), except the device is surface mounted on 31mm x 31mm (10cm ) FR4 PCB with high coverage of single sided 1oz copper. 9. For a dual device with one active die. 10. For dual device with 2 active die running at equal power. 11. Thermal resistance from junction to solder-point (on the exposed collector pads). ZXTC6718MC 2 of 9 October 2012 Document number: DS31927 Rev. 4 - 2 Diodes Incorporated www.diodes.com