ZXTC6719MCTA Diodes Incorporated

A Product Line of Diodes Incorporated ZXTC6719MC DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION Features and Benefits Mechanical Data NPN Transistor Case: DFN3020B-8 BV > 50V CEO Case material: Molded Plastic. Green Molding Compound. I = 4A Continuous Collector Current C Terminals: Pre-Plated NiPdAu leadframe. Low Saturation Voltage (100mV max 1A) Nominal package height: 0.8mm R = 68m for a low equivalent On-Resistance SAT UL Flammability Rating 94V-0 PNP Transistor Moisture Sensitivity: Level 1 per J-STD-020 BV > -40V CEO Weight: 0.013 grams (approximate) I = -3A Continuous Collector Current C Low Saturation Voltage (-220mV max -1A) R = 104m for a low equivalent On-Resistance SAT Applications h characterized up to 6A for high current gain hold up FE DC DC Converters Low profile 0.8mm high package for thin applications Charging circuits R efficient, 40% lower than SOT26 JA 2 6mm footprint, 50% smaller than TSOP6 and SOT26 Power switches Lead-Free, RoHS Compliant (Note 1) Motor control Halogen and Antimony Free. Green Device (Note 2) CCFL Backlighting circuits Qualified to AEC-Q101 Standards for High Reliability Portable applications C1 C2 DFN3020B-8 C2 C2 C1 C1 B1 B2 C2 C1 E2 B2 E1 B1 Pin 1 E1 E2 Top View Bottom View Bottom View NPN Transistor PNP Transistor Pin Out Equivalent Circuit Ordering Information (Note 3) Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTC6719MCTA DC3 7 8 3000 Notes: 1. No purposefully added lead. 2. Diodes Incs Green Policy can be found on our website at A Product Line of Diodes Incorporated ZXTC6719MC Maximum Ratings T = 25C unless otherwise specified A Parameter Symbol NPN PNP Unit Collector-Base Voltage V 100 -50 CBO Collector-Emitter Voltage V 50 -40 V CEO Emitter-Base Voltage V 7 -7 EBO Peak Pulse Current I 6 -4 CM (Notes 4 & 7) 4 -3 Continuous Collector Current A I C (Notes 5 & 7) 4.5 -3.5 Base Current I 1 B Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol NPN PNP Unit 1.5 (Notes 4 & 7) 12 2.45 (Notes 5 & 7) Power Dissipation 19.6 W P D Linear Derating Factor 1.13 mW/C (Notes 6 & 7) 8 1.7 (Notes 6 & 8) 13.6 (Notes 4 & 7) 83.3 (Notes 5 & 7) 51.0 Thermal Resistance, Junction to Ambient R JA (Notes 6 & 7) 111 C/W (Notes 6 & 8) 73.5 Thermal Resistance, Junction to Lead (Notes 7 & 9) R 17.1 JL Operating and Storage Temperature Range -55 to +150 T , T C J STG 2 Notes: 4. For a dual device surface mounted on 28mm x 28mm (8cm ) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions the device is measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector pads connected to each half. 5. Same as note (3), except the device is measured at t <5 sec. 2 6. Same as note (3), except the device is surface mounted on 31mm x 31mm (10cm ) FR4 PCB with high coverage of single sided 1oz copper. 7. For a dual device with one active die. 8. For dual device with 2 active die running at equal power. 9. Thermal resistance from junction to solder-point (at the end of the collector lead). ZXTC6719MC 2 of 9 January 2011 Document number: DS31928 Rev. 3 - 2 Diodes Incorporated www.diodes.com