X-On Electronics has gained recognition as a prominent supplier of ZXTD2090E6TA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. ZXTD2090E6TA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

ZXTD2090E6TA Diodes Incorporated

ZXTD2090E6TA electronic component of Diodes Incorporated
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Part No.ZXTD2090E6TA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT Dual 50V NPN Low Sat Switching Tran 160mV
Datasheet: ZXTD2090E6TA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.3633 ea
Line Total: USD 1089.9

Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Thu. 25 Jul to Wed. 31 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 0.3521

0
Ship by Wed. 31 Jul to Fri. 02 Aug
MOQ : 3000
Multiples : 3000
3000 : USD 0.4117

0
Ship by Thu. 25 Jul to Wed. 31 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 0.403

0
Ship by Thu. 25 Jul to Wed. 31 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 0.534

   
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We are delighted to provide the ZXTD2090E6TA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXTD2090E6TA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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A Product Line of Diodes Incorporated ZXTD2090E6 50V DUAL NPN LOW SATURATION SWITCHING TRANSISTOR IN SOT26 Features Mechanical Data BV > 50V Case: SOT26 CEO I = 1A High Continuous Current Case Material: Molded Plastic, Green Molding Compound C High Gain Hold-Up hFE > 200 I = 0.5A UL Flammability Classification Rating 94V-0 C R = 160m for Low Equivalent On Resistance Moisture Sensitivity: Level 1 per J-STD-020 SAT Low Saturation Voltage V < -270mV 1A Terminals: Finish Matte Tin Plated Leads, Solderable per CE(SAT) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) MIL-STD-202, Method 208 Halogen and Antimony Free. Green Device (Note 3) Weight: 0.015 grams (Approximate) Qualified to AEC-Q101 Standards for High Reliability Applications LCD Backlighting Inverter Circuits Boost Functions in DC-DC Converters SOT26 E1 C1 B2 B1 C2 E2 Top View Top View Device Symbol Pin-Out Ordering Information (Notes 4) Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel AEC-Q101 ZXTD2090E6TA 2090 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See A Product Line of Diodes Incorporated ZXTD2090E6 Absolute Maximum Ratings Q1 & Q2 Common ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage 50 V V CBO Collector-Emitter Voltage V 50 V CEO Emitter-Base Voltage V 7 V EBO Continuous Collector Current I 1 A C Peak Pulse Current I 2 A CM Base Current I 200 mA B Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 0.7 (Notes 5 & 9) 5.6 0.9 (Notes 6 & 9) 7.2 Power Dissipation 1.1 W (Notes 6 & 10) P D Linear Derating Factor 8.8 mW/C 1.1 (Notes 7 & 9) 8.8 1.7 (Notes 8 & 9) 13.6 (Notes 5 & 9) 179 (Notes 6 & 9) 139 Thermal Resistance, Junction to Ambient (Notes 6 & 10) 113 R JA C/W (Notes 7 & 9) 113 (Notes 8 & 9) 73 Thermal Resistance, Junction to Lead (Note 11) 95.50 R JL Operating and Storage Temperature Range T , T -55 to +150 C J STG ESD Ratings (Note 12) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the collector lead on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB the device is measured under still air conditions whilst operating in a steady-state. 6. Same as Note 6, except the device is surface mounted on 25mm x 25mm 1oz copper. 7. Same as Note 6, except the device is surface mounted on 50mm x 50mm 2oz copper. 8. Same as Note 8, except the device is measured at t < 5 seconds. 9. One active die operating with the collector attached to the heatsink. 10. Two active dice running at equal power with heatsink split 50% to each collector. 11. Thermal resistance from junction to solder-point (at the end of the collector lead). 12. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 ZXTD2090E6 May 2015 Diodes Incorporated www.diodes.com Document number DS31896 Rev. 5 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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