ZXTD4591E6 COMPLEMENTARY 60V NPN/PNP MEDIUM POWER TRANSISTORS IN SOT26 Features Mechanical Data NPN Transistor Case: SOT26 BV > 60V Case Material: Molded Plastic, Green Molding Compound CEO I = 1A Continuous Collector Current UL Flammability Classification Rating 94V-0 C Low Saturation Voltage (500mV max 1A) Moisture Sensitivity: Level 1 per J-STD-020 h characterised up to 2A Terminals: Finish Matte Tin Plated Leads FE R = 210m 1A for a Low Equivalent On-Resistance Solderable per MIL-STD-202, Method 208 SAT PNP Transistor Weight: 0.015 grams (Approximate) BV > -60V CEO I = -1A Continuous Collector Current C Applications Low Saturation Voltage (-600mV max -1A) hFE characterised up to 2A MOSFET Gate Driver R = 355m 1A for a Low Equivalent On-Resistance SAT Low Power Motor Drive Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Low Power DC-DC Converters Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability SOT26 C1 C2 B1 B2 E1 E2 Top View NPN Transistor PNP Transistor Top View Pin-Out Device Symbol Ordering Information (Note 4) Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTD4591E6TA AEC-Q101 4591 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZXTD4591E6 NPN - Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V 80 V CBO Collector-Emitter Voltage V 60 V CEO Emitter-Base Voltage V 7 V EBO Peak Pulse Current 2 A ICM Continuous Collector Current 1 A I C Base Current 500 mA I B PNP - Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -80 V CBO Collector-Emitter Voltage V -60 V CEO Emitter-Base Voltage V -7 V EBO Peak Pulse Current I -2 A CM Continuous Collector Current I -1 A C Base Current -500 mA I B Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 1.1 (Note 6) Power Dissipation 8.8 W P D Linear Derating Factor 1.7 mW/C (Note 7) 13.6 (Note 6) 113 Thermal Resistance, Junction to Ambient C/W R JA (Note 7) 73 Thermal Resistance, Junction To Lead (Note 8) R 74 C/W JL Operating and Storage Temperature Range T , T -55 to +150 C J STG ESD Ratings (Note 9) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 6. For a device mounted with the collector lead on 25mm x 25mm 1oz copper that is on a single-sided 1.6mm FR4 PCB the device is measured under still air conditions whilst operating in a steady-state. Two active dice running at equal power with heatsink split 50% to each collector. 7. Same as Note 6, except the device is measured at t < 5 seconds. 8. Thermal resistance from junction to solder-point (at the end of the collector lead). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 8 ZXTD4591E6 November 2015 Diodes Incorporated www.diodes.com Document Number: DS33652 Rev: 2 - 2 ADVANCE INFORMATION