A Product Line of Diodes Incorporated ZXTD617MC DUAL 15V NPN LOW SATURATION TRANSISTORS Features and Benefits Mechanical Data BV > 15V Case: DFN3020B-8 CEO I = 4.5A Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound. C Low Saturation Voltage (100mV max 1A) Terminals: Pre-Plated NiPdAu leadframe R = 45 m for a Low Equivalent On-Resistance SAT UL Flammability Rating 94V-0 h specified up to 12A for high current gain hold up FE Nominal Package Height: 0.8mm Dual NPN saving footprint and component count Moisture Sensitivity: Level 1 per J-STD-020 Low profile 0.8mm high package for thin applications Weight: 0.013 grams (approximate) R efficient, 40% lower than SOT26 JA 2 6mm footprint, 50% smaller than TSOP6 and SOT26 Lead-Free, RoHS Compliant (Note 1) Applications Halogen and Antimony Free. Green Device (Note 2) DC-DC Converters Qualified to AEC-Q101 Standards for High Reliability Charging circuits Motor control Power switches Portable applications C2 C1 DFN3020B-8 C2 C2 C1 C1 B2 B1 C1 C2 E2 B2 E1 B1 E2 E1 Pin 1 Top View NPN Transistor Bottom View NPN Transistor Bottom View Pin-Out Equivalent Circuit Ordering Information Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTD617MCTA DAA 7 8 3000 Notes: 1. No purposefully added lead. 2. Diodes Incs Green Policy can be found on our website at A Product Line of Diodes Incorporated ZXTD617MC Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V 40 CBO Collector-Emitter Voltage V 15 V CEO Emitter-Base Voltage V 7 EBO Peak Pulse Current I 15 CM (Notes 3 & 6) 4.5 Continuous Collector Current I A C (Notes 4 & 6) 5 Base Current I 1 B Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Unit 1.5 (Notes 3 & 6) 12 2.45 (Notes 4 & 6) Power Dissipation 19.6 W P D Linear Derating Factor 1.13 mW/C (Notes 5 & 6) 8 1.7 (Notes 5 & 7) 13.6 (Notes 3 & 6) 83.3 (Notes 4 & 6) 51.0 Thermal Resistance, Junction to Ambient R JA (Notes 5 & 6) 111 C/W (Notes 5 & 7) 73.5 Thermal Resistance, Junction to Lead (Notes 6 & 8) 17.1 R JL Operating and Storage Temperature Range -55 to +150 T , T C J STG 2 Notes: 3. For a dual device surface mounted on 28mm x 28mm (8cm ) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions the device is measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector pads connected to each half. 4. Same as note (3), except the device is measured at t <5 sec. 2 5. Same as note (3), except the device is surface mounted on 31mm x 31mm (10cm ) FR4 PCB with high coverage of single sided 1oz copper. 6. For a dual device with one active die. 7. For dual device with 2 active die running at equal power. 8. Thermal resistance from junction to solder-point (at the end of the collector lead). 2 of 7 December 2010 ZXTD617MC Diodes Incorporated www.diodes.com Document Number DS31930 Rev. 3 - 2