ZXTN07012EFF 12V NPN HIGH GAIN POWER TRANSIS TOR IN SOT23F Features Mechanical Data BV > 12V Case: SOT23F CEO BV > 3V ECO Case Material: Molded Plastic. Green Molding Compound. I = 4.5A Continuous Collector Current C UL Flammability Classification Rating 94V-0 Low Saturation Voltage V < 70mV 1A CE(sat) Moisture Sensitivity: Level 1 per J-STD-020 R = 43m CE(sat) Terminals: Finish - Matte Tin Plated Leads, Solderable per 1.5W Power Dissipation MIL-STD-202, Method 208 Complementary PNP Type: ZXTP07012EFF Weight: 0.012 grams (Approximate) Totally Lead-Free & Fully RoHS Compliant (Note 1&2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Applications This low voltage NPN transistor has been designed for applications requiring high gain and very low saturation voltage. The SOT23F LED Driver package is pin compatible with the industry standard SOT23 footprint Boost Converters but offers lower profile and higher dissipation for applications where Logic Interface power density is of utmost importance. Motor Drive C SOT23F E B C B E Top View Top View Device Symbol Pin Configuration Ordering Information (Note 4) Part number Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTN07012EFFTA 1D3 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZXTN07012EFF Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage 20 V V CBO Collector-Emitter Voltage 12 V V CEO Emitter-Collector Voltage (Reverse Blocking) 3 V V ECO Emitter-Base Voltage 7 V V EBO Continuous Collector Current I 4.5 A C Peak Pulse Current I 10 A CM Base Current I 1 A B Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 0.84 (Note 5) 6.72 1.34 (Note 6) 10.72 W Power Dissipation P D Linear Derating Factor 1.50 mW/C (Note 7) 12.0 2.0 (Note 8) 16.0 (Note 5) 149 (Note 6) 93 Thermal Resistance, Junction to Ambient R C/W JA (Note 7) 83 (Note 8) 60 Thermal Resistance, Junction to Lead (Note 9) R 43.77 C/W JL Operating and Storage Temperature Range -55 to +150 C TJ, TSTG ESD Ratings (Note 10) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR-4 PCB device is measured under still air conditions whilst operating in a steady-state. 6. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper. 7. Same as Note 5, except the device is mounted on 50mm x 50mm 2oz copper. 8. Same as Note 7, whilst measured at t < 5 seconds. 9. Thermal resistance from junction to solder-point (at the end of the collector lead). 10. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 ZXTN07012EFF June 2016 Diodes Incorporated www.diodes.com Document number: DS33673 Rev. 2 - 2