ZXTN07045EFF 45V NPN LOW SATURATIO N TRANSISTOR Features Mechanical Data BV > 45V Case: SOT23F CEO I = 4A Continuous Collector Current C Case Material: Molded Plastic. Green Molding Compound Low Saturation Voltage V < 80mV 1A CE(sat) UL Flammability Classification Rating 94V-0 R = 50m CE(sat) Moisture Sensitivity: Level 1 per J-STD-020 h Characterised up to 4A FE Terminals: Finish - Matte Tin Plated Leads, Solderable per High h Min 400 1A FE MIL-STD-202, Method 208 1.5W Power Dissipation Weight: 0.012 grams (Approximate) Complementary PNP Type: ZXTP07040DFF Totally Lead-Free & Fully RoHS Compliant (Notes 1 and 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Applications Description Boost Converters This low voltage NPN transistor has been designed for applications MOSFET and IGBT Gate Drivers requiring high gain and very low saturation voltage. The SOT23F Lamp and Relay Driver package is pin compatible with the industry standard SOT23 footprint Motor Drive but offers lower profile and higher dissipation for applications where Siren Driver power density is of utmost importance. SOT23F C E B C B E Top View Top View Device Symbol Pin Configuration Ordering Information (Note 4) Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTN07045EFFTA AEC-Q101 1D4 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZXTN07045EFF Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage 45 V V CBO Collector-Emitter Voltage V 45 V CEO Emitter-Collector Voltage (Reverse Blocking) 6 V V ECO Emitter-Base Voltage V 7 V EBO Continuous Collector Current 4 A I C Peak Pulse Current I 6 A CM Base Current 1 A I B Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 0.84 (Note 5) 6.72 1.34 (Note 6) Power Dissipation 10.72 W P D Linear Derating Factor 1.50 mW/C (Note 7) 12.0 2.0 (Note 8) 16.0 (Note 5) 149 (Note 6) 93 Thermal Resistance, Junction to Ambient C/W RJA (Note 7) 83 (Note 8) 60 Thermal Resistance, Junction to Lead (Note 9) R 43.77 C/W JL Operating and Storage Temperature Range -55 to +150 T T C J, STG ESD Ratings (Note 10) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in a steady-state. 6. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper. 7. Same as Note 5, except the device is mounted on 50mm x 50mm 2oz copper. 8. Same as Note 7, whilst measured at t < 5 seconds. 9. Thermal resistance from junction to solder-point (at the end of the collector lead). 10. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 ZXTN07045EFF February 2016 Diodes Incorporated www.diodes.com Document number: DS33674 Rev. 6 - 2