ZXTN08400BFF 400V NPN MEDIUM POWER HIGH VOLTAGE TRANSISTOR IN SOT23F Features Mechanical Data BV > 450V Case: SOT23F CEX BV > 400V Case Material: Molded Plastic. Green Molding Compound. CEO BV > 6V UL Flammability Classification Rating 94V-0 ECO I = 0.5A Continuous Collector Current Moisture Sensitivity: Level 1 per J-STD-020 C Low Saturation Voltage V < 175mV 500mA Terminals: Finish Matte Tin Plated Leads, Solderable per CE(SAT) 1.5W Power Dissipation MIL-STD-202, Method 208 Complementary PNP Type: ZXTP08400BFF Weight: 0.012 grams (Approximate) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Applications This NPN transistor has been designed for applications requiring high High Voltage voltage blocking. The SOT23F package is pin compatible with the Low Saturation Voltage industry standard SOT23 foot print but offers lower profile and higher Low Profile Small Package Outline power dissipation for applications where power density is of utmost importance. C SOT23F E B C B E Top View Top View Device Symbol Pin Configuration Ordering Information (Note 4) Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel ZXTN08400BFFTA AEC-Q101 1D5 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZXTN08400BFF Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V 450 V CBO Collector-Emitter Voltage (Forward Blocking) V 450 V CEX Collector-Emitter Voltage 400 V VCEO Emitter-Collector Voltage (Reverse Blocking) 6 V V ECO Emitter-Base Voltage 7 V V EBO Continuous Collector Current 0.5 A I C Peak Pulse Current 1 A I CM Base Current 0.2 A I B Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 0.84 (Note 5) 6.72 1.34 (Note 6) 10.72 Power Dissipation W P D Linear Derating Factor 1.5 mW/C (Note 7) 12 2 (Note 8) 16 (Note 5) 149 (Note 6) 93.4 Thermal Resistance, Junction to Ambient C/W R JA (Note 7) 83.3 (Note 8) 60 (Note 9) Thermal Resistance, Junction to Lead R 43.8 C/W JL Operating and Storage Temperature Range T T -55 to +150 C J, STG ESD Ratings (Note 10) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR-4 PCB device is measured under still air conditions whilst operating in a steady-state. 6. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper. 7. Same as Note 5, except the device is mounted on 50mm x 50mm 2oz copper. 8. Same as Note 7, whilst measured at t < 5 seconds. 9. Thermal resistance from junction to solder-point (at the end of the collector lead). 10. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 ZXTN08400BFF May 2016 Diodes Incorporated www.diodes.com Document number: DS33675 Rev. 2 - 2