ZXTN19020CFF 20V NPN HIGH GAIN POWER TRANSISTOR IN SOT23F Features Mechanical Data BV > 20V Case: SOT23F CEO BV > 65V Case Material: Molded Plastic. Green Molding Compound. CEX BV > 4.5V UL Flammability Classification Rating 94V-0 ECO I = 7A Continuous Collector Current Moisture Sensitivity: Level 1 per J-STD-020 C Very Low V < 30mV 1A Terminals: Finish Matte Tin Plated Leads, Solderable per CE(SAT) R = 18m MIL-STD-202, Method 208 CE(SAT) 1.5W Power Dissipation Weight: 0.012 grams (Approximate) High Forward Blocking Voltage High Gain Applications Complementary PNP Type: ZXTP19020CFF Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) MOSFET and IGBT Gate Driving Halogen and Antimony Free. Green Device (Note 3) LED Driving Qualified to AEC-Q101 Standards for High Reliability Strobe Flash Motor Drive Micro Buffers Description Advanced process capability has been used to maximize the performance of this transistor. The SOT23F package is compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance. SOT23F C E C B B E Top View Top View Device Symbol Pin Configuration Ordering Information (Note 4) Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel ZXTN19020CFFTA AEC-Q101 1E2 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZXTN19020CFF Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V 65 V CBO Collector-Emitter Voltage (Forward Blocking) V 65 V CEX Collector-Emitter Voltage (Base Open) V 20 V CEO Emitter-Collector Voltage (Reverse Blocking) V 4.5 V ECO Emitter-Base Voltage V 7 V EBO Continuous Collector Current 7 A IC Peak Pulse Current 15 A I CM Base Current 1 A I B Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 0.84 (Note 5) 6.72 1.34 (Note 6) Power Dissipation 10.72 W P D Linear Derating Factor mW/C 1.50 (Note 7) 12.0 2.0 (Note 8) 16.0 (Note 5) 149 (Note 6) 93 Thermal Resistance, Junction to Ambient C/W R JA (Note 7) 83 (Note 8) 60 (Note 9) Thermal Resistance, Junction to Lead R 43.8 C/W JL Operating and Storage Temperature Range T T -55 to +150 C J, STG ESD Ratings (Note 10) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR-4 PCB device is measured under still air conditions whilst operating in a steady-state. 6. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper. 7. Same as Note 5, except the device is mounted on 50mm x 50mm 2oz copper. 8. Same as Note 7, whilst measured at t < 5 seconds. 9. Thermal resistance from junction to solder-point (at the end of the collector lead). 10. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 ZXTN19020CFF June 2016 Diodes Incorporated www.diodes.com Document number: DS33676 Rev. 2 - 2