ZXTN19020DFF 20V NPN HIGH GAIN POWER TRANSISTOR Features Mechanical Data BV > 20V Case: SOT23F CEO I = 6.5A Continuous Collector Current C Case Material: Molded Plastic. Green Molding Compound Very Low Saturation Voltage V < 30mV 1A CE(sat) UL Flammability Classification Rating 94V-0 R = 18m CE(sat) Moisture Sensitivity: Level 1 per J-STD-020 High h Min 260 2A FE Terminals: Finish - Matte Tin Plated Leads, Solderable per 1.5W Power Dissipation MIL-STD-202, Method 208 High Forward Blocking Voltage Weight: 0.012 grams (Approximate) Complementary PNP Type: ZXTP19020DFF Totally Lead-Free & Fully RoHS Compliant (Notes 1 and 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Applications Description MOSFET and IGBT Gate Drivers Advanced process capability has been used to maximize the LED Driver performance of this transistor. The SOT23F package is compatible Strobe Flash with the industry standard SOT23 footprint but offers lower profile and Motor Drive higher dissipation for applications where power density is of utmost Micro Buffers importance. C SOT23F E B C B E Top View Pin Configuration Top View Device Symbol Ordering Information (Note 4) Part Number Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTN19020DFFTA AEC-Q101 1E3 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZXTN19020DFF Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage 70 V V CBO Collector-Emitter Voltage (Forward Blocking) V 70 V CEX Collector-Emitter Voltage 20 V V CEO Emitter-Collector Voltage (Reverse Blocking) V 4.5 V ECO Emitter-Base Voltage 7 V V EBO Continuous Collector Current I 6.5 A C Peak Pulse Current 20 A I CM Base Current I 1 A B Thermal Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit 0.84 (Note 5) 6.72 1.34 (Note 6) 10.72 W Power Dissipation P D Linear Derating Factor 1.50 mW/C (Note 7) 12.0 2.0 (Note 8) 16.0 (Note 5) 149 (Note 6) 93 Thermal Resistance, Junction to Ambient R C/W JA (Note 7) 83 (Note 8) 60 Thermal Resistance, Junction to Lead (Note 9) 43.77 R C/W JL Operating and Storage Temperature Range T T -55 to +150 C J, STG ESD Ratings (Note 10) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR-4 PCB device is measured under still air conditions whilst operating in a steady-state. 6. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper. 7. Same as Note 5, except the device is mounted on 50mm x 50mm 2oz copper. 8. Same as Note 7, whilst measured at t < 5 seconds. 9. Thermal resistance from junction to solder-point (at the end of the collector lead). 10. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 ZXTN19020DFF June 2016 Diodes Incorporated www.diodes.com Document number: DS33677 Rev. 2 - 2