ZXTN19060CFF 60V NPN HIGH GAIN POWER TRANSISTOR IN SOT23F Features Mechanical Data BV > 60V Case: SOT23F CEO BV > 160V Case Material: Molded Plastic. Green Molding Compound. CEX BV > 6V UL Flammability Classification Rating 94V-0 ECO I = 5.5A Continuous Collector Current Moisture Sensitivity: Level 1 per J-STD-020 C Low Saturation Voltage V < 45mV 1A Terminals: Finish Matte Tin Plated Leads, Solderable per CE(SAT) R = 26m MIL-STD-202, Method 208 CE(SAT) h Characterised Up to 6A Weight: 0.012 grams (Approximate) FE 1.5W Power Dissipation Complementary PNP Type: ZXTP19060CFF Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Applications Description Line Switching Advanced process capability has been used to maximise the Motor Driving (Including DC Fans) performance of this transistor. The SOT23F package is pin High-Side Switches compatible with the industry standard SOT23 footprint but offers Subscriber Line Interface Cards (SLIC) lower profile and higher dissipation for applications where power density is of utmost importance. SOT23F C E C B B E Top View Top View Device Symbol Pin Configuration Ordering Information (Note 4) Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel ZXTN19060CFFTA AEC-Q101 1E4 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZXTN19060CFF Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage 160 V V CBO Collector-Emitter Voltage (Forward Blocking) 160 V V CEX Collector-Emitter Voltage 60 V V CEO Emitter-Collector Voltage (Reverse Blocking) 6 V V ECO Emitter-Base Voltage V 7 V EBO Continuous Collector Current I 5.5 A C Peak Pulse Current I 12 A CM Base Current I 1 A B Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 0.84 (Note 5) 6.72 1.34 (Note 6) Power Dissipation 10.72 W P D Linear Derating Factor mW/C 1.50 (Note 7) 12.0 2.0 (Note 8) 16.0 (Note 5) 149 (Note 6) 93 Thermal Resistance, Junction to Ambient R C/W JA (Note 7) 83 (Note 8) 60 Thermal Resistance, Junction to Lead (Note 9) 43.8 C/W R JL Operating and Storage Temperature Range -55 to +150 C T T J, STG ESD Ratings (Note 10) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in a steady-state. 6. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper. 7. Same as Note 5, except the device is mounted on 50mm x 50mm 2oz copper. 8. Same as Note 7, whilst measured at t < 5 seconds. 9. Thermal resistance from junction to solder-point (at the end of the collector lead). 10. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 ZXTN19060CFF February 2016 Diodes Incorporated www.diodes.com Document number: DS33681 Rev. 3 - 2