X-On Electronics has gained recognition as a prominent supplier of ZXTN19100CZTA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. ZXTN19100CZTA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

ZXTN19100CZTA Diodes Incorporated

Hot ZXTN19100CZTA electronic component of Diodes Incorporated
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Part No.ZXTN19100CZTA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Diodes Incorporated Bipolar Transistors - BJT NPN 100V 5.25A
Datasheet: ZXTN19100CZTA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4367 ea
Line Total: USD 0.44 
Availability - 1145
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
311
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 321
Multiples : 1
321 : USD 0.3301

1145
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4367
10 : USD 0.3491
30 : USD 0.3052
100 : USD 0.2724
500 : USD 0.2461
1000 : USD 0.233

2215
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 0.858
10 : USD 0.6116
100 : USD 0.4268
500 : USD 0.3674
1000 : USD 0.3311
2000 : USD 0.3113

311
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 24
Multiples : 1
24 : USD 0.3301

23280
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 0.3217

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the ZXTN19100CZTA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXTN19100CZTA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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ZXTN19100CZ 100V NPN medium power transistor in SOT89 Summary BV > 200V CEX BV > 100V CEO BV > 5V ECO I = 5.25A C(cont) V < 65mV 1A CE(sat) R = 44m CE(sat) P = 2.4W D Complementary part number ZXTP19100CZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. B Features Higher power dissipation SOT89 package E High peak current Low saturation voltage High forward blocking voltage Applications E PSU start up switch Motor drive C C Lamp, relay and solenoid switches B Ordering information Pinout - top view Device Reel size Tape width Quantity (inches) (mm) per reel ZXTN19100CZTA 7 12 1000 Device marking 1L9 Issue 1 - February 2008 1 www.zetex.com Zetex Semiconductors plc 2008ZXTN19100CZ Absolute maximum ratings Parameter Symbol Limit Unit Collector-Base voltage V 200 V CBO Collector-Emitter voltage (forward blocking) V 200 V CEX Collector-Emitter voltage V 100 V CEO Emitter-Collector voltage (reverse blocking) V 6V ECX Emitter-Base voltage V 7V EBO (c) I 5.25 A Continuous Collector current C Base current I 1A B Peak pulse current I 10 A CM (a) P 1.1 W Power dissipation at T =25C D A 8.8 mW/C Linear derating factor (b) P 1.8 W Power dissipation at T =25C D A 14.4 mW/C Linear derating factor (c) P 2.4 W Power dissipation at T =25C D A 19.2 mW/C Linear derating factor (d) P 4.46 W Power dissipation at T =25C D A 35.7 mW/C Linear derating factor (e) P 26.6 W Power dissipation at T =25C D C 213 mW/C Linear derating factor Operating and storage temperature range T , T -55 to 150 C j stg Thermal resistance Parameter Symbol Limit Unit (a) R 117 C/W Junction to ambient JA (b) R 68 C/W Junction to ambient JA (c) R 51 C/W Junction to ambient JA (d) R 28 C/W Junction to ambient JA (e) R 4.69 C/W Junction to case JC NOTES: (a) For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (c) Mounted on 50mm x 50mm x 0.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (d) As (c) above measured at t<5 seconds. (e) Junction to case (collector tab). Typical. Issue 1 - February 2008 2 www.zetex.com Zetex Semiconductors plc 2008

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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