X-On Electronics has gained recognition as a prominent supplier of ZXTN2007GTA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. ZXTN2007GTA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

ZXTN2007GTA Diodes Incorporated

Hot ZXTN2007GTA electronic component of Diodes Incorporated
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Part No.ZXTN2007GTA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 30 V 7 A 140MHz 3 W Surface Mount SOT-223-3
Datasheet: ZXTN2007GTA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
49: USD 0.3595 ea
Line Total: USD 17.62 
Availability - 47
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 49  Multiples: 1
Pack Size: 1
Availability Price Quantity
47
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 49
Multiples : 1
49 : USD 0.3595

730
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 0.7464
10 : USD 0.6216
30 : USD 0.5592
100 : USD 0.4967
500 : USD 0.4601
1000 : USD 0.4412

1383
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.111
10 : USD 0.66
100 : USD 0.5555
500 : USD 0.4455
1000 : USD 0.4015
2000 : USD 0.3938

47
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 23
Multiples : 1
23 : USD 0.3595

11640
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 0.4062

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
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Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the ZXTN2007GTA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXTN2007GTA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Green ZXTN2007G 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data BV > 30V Case: SOT223 CEO I = 7A Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound. C I = 20A Peak Pulse Current UL Flammability Rating 94V-0 CM Low Saturation Voltage V < 50mV Max 1A Moisture Sensitivity: Level 1 per J-STD-020 CE(SAT) R = 28m 6.5A for Low Equivalent On-Resistance Terminals: Finish Matte Tin Plated Leads. Solderable per SAT MIL-STD-202, Method 208 h Specified up to 20A for High Gain Hold Up FE Lead-Free Finish RoHS Compliant (Notes 1 & 2) Weight: 0.112 grams (Approximate) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Applications DC-DC Converters MOSFET Gate Drivers Charging Circuits Power Switches Motor Control SOT223 Top View Pin-Out Top View Device Schematic Ordering Information (Note 4) Part Number Marking Reel Size (inches) Tape Width (mm) Quantity per Reel ZXTN2007GTA ZXTN2007 7 12 1,000 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See ZXTN2007G Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage 80 V V CBO Collector-Emitter Voltage V 30 V CEO Emitter-Base Voltage V 7 V EBO Continuous Collector Current I 7 A C Peak Pulse Current I 20 A CM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 3.0 (Note 5) 24 Power Dissipation W P D Linear Derating Factor 1.6 mW/C (Note 6) 12.8 (Note 5) R 42 JA Thermal Resistance, Junction to Ambient (Note 6) R 78 C/W JA Thermal Resistance, Junction to Lead (Note 7) 8.8 R JL Operating and Storage Temperature Range -55 to +150 C T T J, STG ESD Ratings (Note 8) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the collector lead on 52mm x 52mm 2oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in steady-state. 6. Same as Note 5, except the device is mounted on 25mm x 25mm 1oz copper. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 ZXTN2007G December 2015 Diodes Incorporated www.diodes.com Document number: DS33657 Rev. 3 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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