ZXTN2011G Diodes Incorporated

ZXTN2011G 100V NPN LOW SATURATION MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BV = 100V : R = 36m I = 6A CEO SAT C DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES 6 amps continuous current Up to 10 amps peak current Very low saturation voltages APPLICATIONS Motor driving Line switching High side switches Subscriber line interface cards (SLIC) ORDERING INFORMATION PINOUT DEVICE REEL TAPE QUANTITY PER SIZE WIDTH REEL ZXTN2011GTA 7 12mm 1,000 units embossed ZXTN2011GTC 13 4,000 units DEVICE MARKING ZXTN 2011 TOP VIEW ISSUE 2 - MAY 2006 1 SEMICONDUCTORS SOT223ZXTN2011G ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Collector-base voltage BV 200 V CBO Collector-emitter voltage BV 100 V CEO Emitter-base voltage BV 7V EBO (a) Continuous collector current I 6 A C Peak pulse current I 10 A CM (a) Power dissipation at T =25C P 3.0 W A D Linear derating factor 24 mW/C (b) Power dissipation at T =25C P 1.6 W A D Linear derating factor 12.8 mW/C Operating and storage temperature range T,T -55 to +150 C j stg THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT (a) Junction to ambient R 42 C/W JA NOTES (a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. ISSUE 2 - MAY 2006 2 SEMICONDUCTORS