X-On Electronics has gained recognition as a prominent supplier of ZXTN2011ZTA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. ZXTN2011ZTA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

ZXTN2011ZTA Diodes Incorporated

ZXTN2011ZTA electronic component of Diodes Incorporated
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See Product Specifications
Part No.ZXTN2011ZTA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 100 V 4.5 A 130MHz 2.1 W Surface Mount SOT-89-3
Datasheet: ZXTN2011ZTA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 0.3705 ea
Line Total: USD 370.5

Availability - 970
Ship by Wed. 24 Jul to Tue. 30 Jul
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
970
Ship by Wed. 24 Jul to Tue. 30 Jul
MOQ : 1000
Multiples : 1000
1000 : USD 0.3705
2000 : USD 0.3705
3000 : USD 0.3705
4000 : USD 0.3705
5000 : USD 0.3705

1801
Ship by Tue. 30 Jul to Thu. 01 Aug
MOQ : 1
Multiples : 1
1 : USD 1.0005
10 : USD 0.8683
100 : USD 0.6014
500 : USD 0.5026
1000 : USD 0.3933
2000 : USD 0.3784

281
Ship by Wed. 24 Jul to Tue. 30 Jul
MOQ : 1
Multiples : 1
1 : USD 1.027
10 : USD 0.8931
35 : USD 0.4875
94 : USD 0.4615
1000 : USD 0.4433

45590
Ship by Wed. 24 Jul to Tue. 30 Jul
MOQ : 1000
Multiples : 1000
1000 : USD 0.3737

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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We are delighted to provide the ZXTN2011ZTA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXTN2011ZTA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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A Product Line of Diodes Incorporated Green ZXTN2011Z 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data BV > 100V Case: SOT89 CEO I = 4.5A high Continuous Current Case material: molded plastic. Green molding compound. C I = 10A Peak Pulse Current UL Flammability Rating 94V-0 CM R = 31m for a low equivalent On-Resistance CE(sat) Moisture Sensitivity: Level 1 per J-STD-020 Low saturation voltage V < 60mV I = 1A CE(sat) C Terminals: Finish - Matte Tin Plated Leads, Solderable per h specified up to 10A for high current gain hold up MIL-STD-202, Method 208 FE Lead-Free Finish RoHS compliant (Notes 1 & 2) Weight: 0.05 grams (Approximate) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Applications Motor driving Line switching High side switches Subscriber line interface cards (SLIC) SOT89 C E B C C B E Top View Top View Device Sy mbol Pin Out Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTN2011ZTA 853 7 12 1,000 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See A Product Line of Diodes Incorporated ZXTN2011Z Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage 200 V V CBO Collector-Emitter Voltage 100 V V CEO Emitter-Base Voltage 7 V V EBO Continuous Collector Current 4.5 A I C Peak Pulse Current I 10 A CM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) 1.5 W P D Linear derating factor 12 mW/C Power Dissipation (Note 6) 2.1 W P D Linear derating factor 16.8 mW/C Thermal Resistance, Junction to Ambient (Note 5) 83 R C/W JA Thermal Resistance, Junction to Ambient (Note 6) 60 R C/W JA Thermal Resistance, Junction to Ambient (Note 7) 3.23 R C/W JL Operating and Storage Temperature Range T T -55 to +150 C J, STG ESD Ratings (Note 8) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions device measured when operating in steady state condition. 6. Same as note (5), except the device is mounted on 50mm X 50mm single sided 1oz weight copper. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. ZXTN2011Z 2 of 7 December 2012 Diodes Incorporated Datasheet Number: DS33663 Rev. 3 - 2 www.diodes.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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