X-On Electronics has gained recognition as a prominent supplier of ZXTN2018FQTA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. ZXTN2018FQTA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

ZXTN2018FQTA Diodes Incorporated

ZXTN2018FQTA electronic component of Diodes Incorporated
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See Product Specifications
Part No.ZXTN2018FQTA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT Pwr Low Sat Transistor
Datasheet: ZXTN2018FQTA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6313 ea
Line Total: USD 0.63

Availability - 2420
Ship by Tue. 30 Jul to Thu. 01 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8026
Ship by Tue. 30 Jul to Thu. 01 Aug
MOQ : 1
Multiples : 1
1 : USD 0.6313
10 : USD 0.5647
100 : USD 0.3944
500 : USD 0.3392
1000 : USD 0.2967
3000 : USD 0.2725
6000 : USD 0.261
9000 : USD 0.261
24000 : USD 0.253

   
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We are delighted to provide the ZXTN2018FQTA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXTN2018FQTA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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ZXTN2018FQ 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the Case: SOT23 stringent requirement of Automotive Applications. Case Material: Molded Plastic. Green Molding Compound. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Features Terminals: Finish - Matte Tin Plated Leads, Solderable per BV > 60V CEO MIL-STD-202, Method 208 Weight: 0.008 grams (Approximate) Maximum Continuous Collector Current IC = 5A V < 45mV 1A CE(SAT) R = 25m CE(SAT) Applications High Power Dissipation SOT23 (Type DN) Package MOSFET and IGBT Gate Driving High Peak Current Motor Drive Low Saturation Voltage Relay, Lamp and Solenoid Drive 140V Forward Blocking Voltage Complementary Part Number ZXTP2027FQ Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) SOT23 (Type DN) C B E Top View Top View Device Symbol Pin-Out Ordering Information (Note 5) Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel ZXTN2018FQTA Automotive 851 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See ZXTN2018FQ Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V 140 V CBO Collector-Emitter Voltage V 140 V CEV Collector-Emitter Voltage V 60 V CEO Emitter-Base Voltage V 7 V EBO Continuous Collector Current I 5 A C Base Current 1 A IB Peak Pulse Current 12 A I CM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 1.0 (Note 6) 8.0 Power Dissipation 1.2 W (Note 7) P D Linear Derating Factor 9.6 mW/C 1.56 (Note 8) 12.5 (Note 6) 125 Thermal Resistance, Junction to Ambient (Note 7) R 104 C/W JA (Note 8) 80 Operating and Storage Temperature Range T T -55 to +150 C J, STG ESD Ratings (Note 9) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 6. For a device mounted with the collector lead on 18mm 18mm 2oz copper that is on a single-sided 1.6mm FR-4 PCB device is measured under still air conditions whilst operating in steady-state. 7. Same as note (6), except the device is mounted on 30mm 30mm 2oz copper. 8. Same as note (6), except measured at t < 5 seconds. 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 ZXTN2018FQ May 2019 Diodes Incorporated www.diodes.com Document number: DS41628 Rev. 1 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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