ZXTN2038FTA Diodes Incorporated

A Product Line of Diodes Incorporated ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V > 80V (BR)CEV V > 60V (BR)CEO I = 1A c(cont) V < 500mV 1A ce(sat) Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low saturation voltage making it ideal for power MOSFET gate driving and low loss power switching. Features Low saturation voltage for reduced power dissipation 1 to 2 amp high current capability Pb-free SOT23 package Applications Power MOSFET gate driving Low loss power switching Ordering information Device Reel size Tape width Quantity per reel ZXTN2038FTA 7 8mm 3,000 ZXTN2038FTC 13 8mm 10,000 Device marking N38 Issue 4 - January 2009 1 www.zetex.com Diodes Incorporated, 2008 www.diodes.comZXTN2038F Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage V 80 V CBO Collector-emitter voltage V 80 V CEV Collector-emitter voltage V 60 V CEO Emitter-base voltage V 5.0 V EBO Peak pulse current I 2A CM (*) I 1A Continuous collector current C Peak base current I 1A BM (*) P 350 mW Power dissipation T =25C D A Operating and storage temperature T :T 55 to +150 C j stg NOTES: (*) For a device surface mounted on a 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Issue 4 - January 2009 2 www.zetex.com Diodes Incorporated, 2008 www.diodes.com