ZXTN25012EFLTA Diodes Incorporated

ZXTN25012EFL 12V, SOT23, NPN low power transistor Summary BV > 12V CEO BV > 4.5V ECO h > 500 FE I = 2A C(cont) V < 65 mV 1A CE(sat) R = 46 m CE(sat) P = 350mW D Description C Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents. B Features High peak current E Low saturation voltage 6V reverse blocking voltage Applications E MOSFET and IGBT gate driving DC-DC conversion C LED driving Interface between low voltage IC s and load B Pinout - top view Ordering information Device Reel size Tape width Quantity (inches) (mm) per reel ZXTN25012EFLTA 7 8 3000 Device marking 1B6 Issue 2 - January 2007 1 www.zetex.com Zetex Semiconductors plc 2007ZXTN25012EFL Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage V 20 V CBO Collector-emitter voltage V 12 V CEO Emitter-collector voltage V 4.5 V ECO Emitter-base voltage V 7V EBO (a) I 2A Continuous collector current C Base current I 500 mA B Peak pulse current I 15 A CM (a) P 350 mW Power dissipation T =25C D amb Linear derating factor 2.8 mW/C Operating and storage temperature range T , T - 55 to 150 C j stg Thermal resistance Parameter Symbol Limit Unit (a) R 357 C/W Junction to ambient JA NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Issue 2 - January 2007 2 www.zetex.com Zetex Semiconductors plc 2007