ZXTN25020DFLTA Diodes Incorporated

ZXTN25020DFL 20V, SOT23, NPN low power transistor Summary BV > 100V CEX BV > 20V CEO BV > 5V ECO I = 2A C(cont) I = 8A CM V < 70mV 1A CE(sat) R = 55m CE(sat) P = 350mW D Complementary part number ZXTP25020DFL Description C Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents. B Features High peak current E Low saturation voltage 100V forward blocking voltage Applications E MOSFET and IGBT gate driving DC-DC conversion C LED driving Interface between low voltage IC s and loads B Pinout - top view Ordering information Device Reel size Tape width Quantity per reel (inches) (mm) ZXTN25020DFLTA 7 8 3,000 Device marking 1A1 Issue 4 - January 2007 1 www.zetex.com Zetex Semiconductors plc 2007ZXTN25020DFL Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage V 100 V CBO Collector-emitter voltage (forward blocking) V 100 V CEX Collector-emitter voltage V 20 V CEO Emitter-collector voltage (reverse blocking) V 5V ECO Emitter-base voltage V 7V EBO (a) I 2A Continuous collector current C Base current I 500 mA B Peak pulse current I 8A CM (a) P 350 mW Power dissipation at T =25C D amb Linear derating factor 2.8 mW/C Operating and storage temperature range T , T -55 to 150 C j stg Thermal resistance Parameter Symbol Limit Unit (a) R 357 C/W Junction to ambient JA NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Issue 4 - January 2007 2 www.zetex.com Zetex Semiconductors plc 2007