X-On Electronics has gained recognition as a prominent supplier of ZXTN25050DFHTA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. ZXTN25050DFHTA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

ZXTN25050DFHTA Diodes Incorporated

ZXTN25050DFHTA electronic component of Diodes Incorporated
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Part No.ZXTN25050DFHTA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN 50V HIGH GAIN
Datasheet: ZXTN25050DFHTA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6325 ea
Line Total: USD 0.63 
Availability - 5087
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2404
Ship by Fri. 13 Dec to Wed. 18 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5291
10 : USD 0.4277
30 : USD 0.3769
100 : USD 0.339
500 : USD 0.3086
1000 : USD 0.2933

5087
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.6325
10 : USD 0.4565
100 : USD 0.3212
500 : USD 0.2651
1000 : USD 0.2431
3000 : USD 0.2145
6000 : USD 0.2134
9000 : USD 0.2057

123
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 1.176
5 : USD 0.476
25 : USD 0.4214
47 : USD 0.3696
128 : USD 0.35

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Height
Length
Width
Brand
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Category
Brand Category
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We are delighted to provide the ZXTN25050DFHTA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXTN25050DFHTA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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ZXTN25050DFH 50V, SOT23, NPN medium power transistor Summary BV > 150V CEX BV > 50V CEO BV > 5V ECO I = 4A C(cont) V < 60mV 1A CE(sat) R = 40m CE(sat) P = 1.25W D Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. B Features High power dissipation SOT23 package High peak current E High gain Low saturation voltage 150V forward blocking voltage E 5V reverse blocking voltage Applications C MOSFET gate drivers Power switches B Motor control Pinout - top view DC fans DC-DC converters Ordering information Device Reel size Tape width Quantity per (inches) (mm) reel ZXTN25050DFHTA 7 8 3,000 Device marking 017 Issue 3 - September 2006 1 www.zetex.com Zetex Semiconductors plc 2006ZXTN25050DFH Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage V 150 V CBO Collector-emitter voltage (forward blocking) V 150 V CEX Collector-emitter voltage V 50 V CEO Emitter-collector voltage (reverse blocking) V 5V ECO Emitter-base voltage V 7V EBO (c) I 4A Continuous collector current C Base current I 1A B Peak pulse current I 10 A CM (a) P 0.73 W Power dissipation at T =25C D amb 5.84 mW/C Linear derating factor (b) P 1.05 W Power dissipation at T =25C D amb 8.4 mW/C Linear derating factor (c) P 1.25 W Power dissipation at T =25C D amb 9.6 mW/C Linear derating factor (d) P 1.81 W Power dissipation at T =25C D amb 14.5 mW/C Linear derating factor Operating and storage temperature range T , T - 55 to 150 C j stg Thermal resistance Parameter Symbol Limit Unit (a) R 171 C/W Junction to ambient JA (b) R 119 C/W JA Junction to ambient (c) R 100 C/W Junction to ambient JA (d) R 69 C/W Junction to ambient JA NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d) As (c) above measured at t<5secs. Issue 3 - September 2006 2 www.zetex.com Zetex Semiconductors plc 2006

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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