X-On Electronics has gained recognition as a prominent supplier of ZXTN25060BFHTA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. ZXTN25060BFHTA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

ZXTN25060BFHTA Diodes Incorporated

ZXTN25060BFHTA electronic component of Diodes Incorporated
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Part No.ZXTN25060BFHTA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT NPN Medium Power
Datasheet: ZXTN25060BFHTA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.2437 ea
Line Total: USD 731.1 
Availability - 14550
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
14550
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.2437

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ZXTN25060BFHTA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXTN25060BFHTA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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ZXTN25060BFH 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Features Mechanical Data BV > 60V Case: SOT23 CEO BV > 150V UL Flammability Rating 94V-0 CEX BV > 6V Case Material: Molded Plastic. Green Molding Compound. ECO I = 3.5A high Continuous Collector Current Moisture Sensitivity: Level 1 per J-STD-020 C V < 65mA 1A Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL- CE(SAT) e3 R = 43m 1A STD-202, Method 208 CE(SAT) 1.25W Power Dissipation Weight: 0.008 grams (Approximate) Complementary PNP Type: ZXTP25060BFH Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability SOT23 C E C B B E Top View Device Symbol Top View Pin-Out Ordering Information (Note 4 ) Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel ZXTN25060BFHTA AEC-Q101 019 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See ZXTN25060BFH Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V 150 V CBO Collector-Emitter Voltage (Forward Blocking) V 150 V CEX Collector-Emitter Voltage V 60 V CEO Emitter-Collector Voltage (Reverse Blocking) V 6 V ECO Emitter-Base Voltage V 7 V EBO Continuous Collector Current I 3.5 A C Peak Pulse Current 10 A I CM Base Current 200 mA I B Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) P 0.73 W D Linear Derating Factor 5.84 mW/C Power Dissipation (Note 6) W P 1.05 D Linear Derating Factor 8.4 mW/C Power Dissipation (Note 7) P 1.25 W D Linear Derating Factor 9.6 mW/C Power Dissipation (Note 8) P 1.81 W D Linear Derating Factor mW/C 14.5 Thermal Resistance, Junction to Ambient (Note 5) 171 C/W R JA Thermal Resistance, Junction to Ambient (Note 6) 119 C/W R JA Thermal Resistance, Junction to Ambient (Note 7) 100 C/W R JA Thermal Resistance, Junction to Ambient (Note 8) R 69 C/W JA Operating and Storage Temperature Range T T -55 to +150 C J, STG ESD Ratings (Note 9) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device surface mounted on 15mm X 15mm X 1.6mm FR-4 PCB with high coverage of single sided 1 oz copper, in still air conditions. 6. Mounted on 25mm X 25mm X 1.6mm FR-4 PCB with high coverage of single sided 2 oz copper, in still air conditions. 7. Mounted on 50mm X 50mm X 1.6mm FR-4 PCB with high coverage of single sided 2 oz copper, in still air conditions. 8. As (7) above measured at t<5s. 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 ZXTN25060BFH May 2018 Diodes Incorporated www.diodes.com Document number: DS33701 Rev. 2 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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