ZXTN25060BZQ
60V NPN MEDIUM POWER TRANSISTOR IN SOT89
Description Mechanical Data
This Bipolar Junction Transistor (BJT) is designed to meet the Case: SOT89
stringent requirements of automotive applications. Case Material: Molded Plastic. Green Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Features
Terminals: Finish - Matte Tin Plated Leads, Solderable per
BV > 150V
CEX
MIL-STD-202, Method 208
BV > 60V
CEO
Weight: 0.055 grams (Approximate)
BV > 6V
ECO
I = 5A Continuous Collector Current
C
Applications
V < 70mV @ 1A
CE(sat)
R = 48m for a Low Equivalent On-Resistance
CE(sat)
Motor Driving (including DC fans)
Very Low Saturation Voltages
Solenoid, Relay and Actuator Drivers
Excellent hFE Characteristics
DC-DC Modules
6V Reverse Blocking Capability
Power Switches
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
MOSFET Gate Drivers
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
SOT89
C
E
C
C
B
B
E
Top View
Top View Equivalent Circuit
Pin-Out
Ordering Information (Notes 4 & 5)
Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXTN25060BZQTA Automotive 1C7 7 12mm 1,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
ZXTN25060BZQ
Absolute Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Collector-Base Voltage 150 V
V
CBO
Collector-Emitter Voltage (Forward Blocking) 150 V
V
CEX
Collector-Emitter Voltage 60 V
V
CEO
Emitter-Collector Voltage (Reverse Blocking) V 6 V
ECO
Emitter-Base Voltage V 7 V
EBO
Continuous Collector Current I 5 A
C
Base Current I 1 A
B
Peak Pulse Current I 10 A
CM
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
(Note 6) 1.1
(Note 7) 1.8
Power Dissipation W
PD
(Note 8) 2.4
(Note 9) 4.46
(Note 6) 117
(Note 7) 68
Thermal Resistance, Junction to Ambient Air R
JA
(Note 8) 51
C/W
(Note 9) 28
Thermal Resistance, Junction to Lead (Note 10) 8
R
JL
Operating and Storage Temperature Range -55 to +150 C
T T
J, STG
ESD Ratings (Note 11)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM 400 V C
Notes: 6. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
7. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper.
8. Same as Note 5, except the device is mounted on 50mm x 50mm 2oz copper.
9. Same as Note 7 measured at t<5 seconds.
10. Thermal resistance from junction to solder-point (on the exposed collector pad).
11. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTN25060BZQ 2 of 8
October 2015
Document number: DS38348 Rev. 1 - 2 Diodes Incorporated
www.diodes.com