ZXTN25060BZTA Diodes Incorporated

ZXTN25060BZ 60V, SOT89, NPN medium power transistor Summary BV > 150V CEX BV > 60V CEO BV > 6V ECO I = 5A C(cont) V < 70mV 1A CE(sat) R = 48m CE(sat) P = 2.4W D Description C Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. B Features Extremely low equivalent on resistance R = 46m at 5A CE(sat) E 5 amps continuous current Up to 10 amps peak current Very low saturation voltages Excellent h characteristics FE E 6V reverse blocking capability Applications C C Emergency lighting circuits B Motor driving (including DC fans) Solenoid, relay and actuator drivers Pinout - top view DC-DC modules Backlight inverters Power switches MOSFET gate drivers Ordering information Device Reel Size Tape width Quantity per reel (inches) (mm) ZXTN25060BZTA 7 12 1000 Device marking 1C7 Issue 3 - January 2007 1 www.zetex.com Zetex Semiconductors plc 2007ZXTN25060BZ Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage V 150 V CBO Collector-emitter voltage (forward blocking) V 150 V CEX Collector-emitter voltage V 60 V CEO Emitter-collector voltage (reverse blocking) V 6V ECO Emitter-base voltage V 7V EBO (c) I 5A Continuous collector current C Base current I 1A B Peak pulse current I 10 A CM (a) P 1.1 W Power dissipation at T = 25C D amb Linear derating factor 8.8 mW/C (b) P 1.8 W Power dissipation at T = 25C D amb Linear derating factor 14.4 mW/C (c) P 2.4 W Power dissipation at T = 25C D amb Linear derating factor 19.2 mW/C (d) P 4.46 W Power dissipation at T = 25C D amb Linear derating factor 35.7 mW/C Operating and storage temperature range T , T - 55 to 150 C j stg Thermal resistance Parameter Symbol Limit Unit (a) R 117 C/W Junction to ambient JA (b) R 68 C/W Junction to ambient JA (c) R 51 C/W Junction to ambient JA (d) R 28 C/W Junction to ambient JA NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d) As (c) above measured at t<5secs. Issue 3 - January 2007 2 www.zetex.com Zetex Semiconductors plc 2007