X-On Electronics has gained recognition as a prominent supplier of ZXTN25100DFHTA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. ZXTN25100DFHTA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

ZXTN25100DFHTA Diodes Incorporated

ZXTN25100DFHTA electronic component of Diodes Incorporated
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Part No.ZXTN25100DFHTA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 100 V 2.5 A 175MHz 1.25 W Surface Mount SOT-23-3
Datasheet: ZXTN25100DFHTA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5764 ea
Line Total: USD 0.58 
Availability - 10280
Ship by Tue. 03 Dec to Thu. 05 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
947
Ship by Thu. 12 Dec to Tue. 17 Dec
MOQ : 1
Multiples : 1
1 : USD 0.3842
10 : USD 0.309
30 : USD 0.2713
100 : USD 0.2431
500 : USD 0.2206
1000 : USD 0.2094

10280
Ship by Tue. 03 Dec to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5764
10 : USD 0.4103
100 : USD 0.3069
500 : USD 0.2563
1000 : USD 0.2354
3000 : USD 0.2145
6000 : USD 0.2145
9000 : USD 0.2057

721
Ship by Tue. 03 Dec to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.784
10 : USD 0.581
46 : USD 0.378
125 : USD 0.357
500 : USD 0.343

689670
Ship by Thu. 05 Dec to Wed. 11 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.2437

1164
Ship by Thu. 05 Dec to Wed. 11 Dec
MOQ : 30
Multiples : 1
30 : USD 0.326

159745
Ship by Thu. 05 Dec to Wed. 11 Dec
MOQ : 34
Multiples : 1
34 : USD 0.2241

34920
Ship by Thu. 05 Dec to Wed. 11 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.2485
6000 : USD 0.239
9000 : USD 0.233

   
Manufacturer
Product Category
Package / Case
Transistor Polarity
Packaging
Brand
Collector Emitter Voltage Vbrceo
Transition Frequency Ft
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Collector Emitter Saturation Voltage Vceon
Continuous Collector Current Ic Max
Current Gain Hfe Max
Current Ic Continuous A Max
Current Ic Hfe
Current Ic Hfe -Do Not Use See Id 1182
Dc Current Gain Hfe Max
Dc Current Gain Hfe Min
Gain Bandwidth Ft Typ
Hfe Min
Hfe Typ
Operating Temperature Min
Operating Temperature Range
Power Dissipation Ptot Max
Termination Type
Voltage Vcbo
Height
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ZXTN25100DFHTA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXTN25100DFHTA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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ZXTN25100DFH 100V, SOT23, NPN medium power transistor Summary BV > 180V CEX BV > 100V CEO BV > 6V ECO I = 2.5A C(cont) V < 95mV 1A CE(sat) R = 86m CE(sat) P = 1.25W D Complementary part number ZXTP25100DFH Description C Advanced process capability and package design have been used to maximise the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally B suited to applications where space is at a premium. Features High power dissipation SOT23 package E High gain Low saturation voltage 180V forward blocking voltage 6V reverse blocking voltage E Application Motor control C DC fans DC-DC converters B Lamp, relay, and solenoid driving Pinout - top view Ordering information Device Reel size Tape width Quantity per reel (inches) (mm) ZXTN25100DFHTA 7 8 3,000 Device marking 1B5 Issue 3 - March 2008 1 www.zetex.com Zetex Semiconductors plc 2008ZXTN25100DFH Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage V 180 V CBO Collector-emitter voltage (forward blocking) V 180 V CEX Collector-emitter voltage V 100 V CEO Emitter-collector voltage (reverse blocking) V 6V ECO Emitter-base voltage V 7V EBO (c) I 2.5 A Continuous collector current C Base current I 0.5 A B Peak pulse current I 3A CM (a) P 0.73 W Power dissipation at T =25C D amb Linear derating factor 5.84 mW/C (b) P 1.05 W Power dissipation at T =25C D amb Linear derating factor 8.4 mW/C (c) P 1.25 W Power dissipation at T =25C D amb Linear derating factor 9.6 mW/C (d) P 1.81 W Power dissipation at T =25C D amb Linear derating factor 14.5 mW/C Operating and storage temperature range T , T - 55 to 150 C j stg Thermal resistance Parameter Symbol Limit Unit (a) R 171 C/W Junction to ambient JA (b) R 119 C/W Junction to ambient JA (c) R 100 C/W Junction to ambient JA (d) R 69 C/W Junction to ambient JA NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d) As (c) above measured at t<5secs. Issue 3 - March 2008 2 www.zetex.com Zetex Semiconductors plc 2008

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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