X-On Electronics has gained recognition as a prominent supplier of ZXTN25100DZTA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. ZXTN25100DZTA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

ZXTN25100DZTA Diodes Incorporated

ZXTN25100DZTA electronic component of Diodes Incorporated
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Part No.ZXTN25100DZTA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 100 V 2.5 A 175MHz 2.4 W Surface Mount SOT-89-3
Datasheet: ZXTN25100DZTA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.572 ea
Line Total: USD 0.57 
Availability - 17449
Ship by Tue. 03 Dec to Thu. 05 Dec
MOQ: 1  Multiples: 1
Pack Size: 1

 ZXTN25100DZTA More Buying Options & Price Grid(s)

Availability Price Quantity
2
Ship by Thu. 05 Dec to Wed. 11 Dec
MOQ : 3
Multiples : 1
3 : USD 0.2144

137
Ship by Thu. 12 Dec to Tue. 17 Dec
MOQ : 1
Multiples : 1
1 : USD 0.496
10 : USD 0.3985
30 : USD 0.3563
100 : USD 0.3045
500 : USD 0.2816
1000 : USD 0.2662

17449
Ship by Tue. 03 Dec to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.572
10 : USD 0.484
100 : USD 0.3311
500 : USD 0.2607
1000 : USD 0.2332
2000 : USD 0.2046

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ZXTN25100DZTA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXTN25100DZTA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

ZXTN25100DZ 100V NPN high gain transistor in SOT89 Summary BV > 180V CEX BV > 100V CEO BV > 6V ECO I = 2.5A C(cont) V < 100mV 1A CE(sat) R = 80m CE(sat) P = 2.4W D Complementary part number ZXTP25100CZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. B Features High power dissipation SOT89 package E High gain Low saturation voltage 180V forward blocking voltage 6V reverse blocking voltage Applications E PSU start up switch DC - DC converters C C Motor drive Relay, lamp and solenoid drive B Ordering information Pinout - top view Device Reel size Tape width Quantity (inches) (mm) per reel ZXTN25100DZTA 7 12 1000 Device marking 1K9 Issue 1 - December 2007 1 www.zetex.com Zetex Semiconductors plc 2007ZXTN25100DZ Absolute maximum ratings Parameter Symbol Limit Unit Collector-Base voltage V 180 V CBO Collector-Emitter voltage (forward blocking) V 180 V CEX Collector-Emitter voltage V 100 V CEO Emitter-Collector voltage (reverse blocking) V 6V ECO Emitter-Base voltage V 7V EBO (c) I 2.5 A Continuous Collector current C Base current I 1A B Peak pulse current I 3.5 A CM (a) P 1.1 W Power dissipation at T =25 C D A 8.8 mW/C Linear derating factor (b) P 1.8 W Power dissipation at T =25 C D A 14.4 mW/C Linear derating factor (c) P 2.4 W Power dissipation at T =25 C D A 19.2 mW/C Linear derating factor (d) P 4.46 W Power dissipation at T =25 C D A 35.7 mW/C Linear derating factor (e) P 19.2 W Power dissipation at T =25 C D C 153 mW/C Linear derating factor Operating and storage temperature range T , T -55 to +150 C j stg Thermal resistance Parameter Symbol Limit Unit (a) R 117 C/W Junction to ambient JA (b) R 68 C/W Junction to ambient JA (c) R 51 C/W Junction to ambient JA (d) R 28 C/W Junction to ambient JA (e) R 7.95 C/W Junction to case JC NOTES: (a) For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (c) Mounted on 50mm x 50mm x 0.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (d) As (c) above measured at t<5 seconds. (e) Junction to case (collector tab). Typical Issue 1 - December 2007 2 www.zetex.com Zetex Semiconductors plc 2007

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

DIO may also be referenced as

Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX

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