X-On Electronics has gained recognition as a prominent supplier of ZXTN5551GTA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. ZXTN5551GTA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

ZXTN5551GTA Diodes Incorporated

ZXTN5551GTA electronic component of Diodes Incorporated
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See Product Specifications
Part No.ZXTN5551GTA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 160 V 600 mA 130MHz 2 W Surface Mount SOT-223-3
Datasheet: ZXTN5551GTA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 0.0758 ea
Line Total: USD 75.8

Availability - 2910
Ship by Wed. 24 Jul to Tue. 30 Jul
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
2910
Ship by Wed. 24 Jul to Tue. 30 Jul
MOQ : 1000
Multiples : 1000
1000 : USD 0.0758

970
Ship by Wed. 24 Jul to Tue. 30 Jul
MOQ : 1000
Multiples : 1000
1000 : USD 0.1599
3000 : USD 0.1599
4000 : USD 0.1599
10000 : USD 0.1599
15000 : USD 0.1599

802
Ship by Wed. 31 Jul to Mon. 05 Aug
MOQ : 5
Multiples : 5
5 : USD 0.3334
50 : USD 0.2724
150 : USD 0.2462
1000 : USD 0.2034
2000 : USD 0.1889
5000 : USD 0.1801

2151
Ship by Tue. 30 Jul to Thu. 01 Aug
MOQ : 1
Multiples : 1
1 : USD 0.4278
10 : USD 0.3669
100 : USD 0.2588
500 : USD 0.207
1000 : USD 0.1552
10000 : USD 0.1438
50000 : USD 0.1392

38800
Ship by Wed. 24 Jul to Tue. 30 Jul
MOQ : 1000
Multiples : 1000
1000 : USD 0.1625

2910
Ship by Wed. 24 Jul to Tue. 30 Jul
MOQ : 1000
Multiples : 1000
1000 : USD 0.0758

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ZXTN5551GTA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXTN5551GTA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NOT RECOMMENDED FOR NEW DESIGN A Product Line of USE DZT5551 Diodes Incorporated ZXTN5551G 160V NPN VOLTAGE TRANSISTOR Features Mechanical Data BV > 160V Case: SOT223 CEO Case material: Molded Plastic. Green Molding Compound. BV > 6V EBO UL Flammability Rating 94V-0 I = 600mA Continuous Collector Current C Moisture Sensitivity: Level 1 per J-STD-020 Low Saturation Voltage (150mV max 10mA) Terminals: Matte Tin Finish Leads, Solderable per MIL-STDF-202 h specified up to 50mA for a high gain hold up FE Method 208 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Weight: 0.112 grams (Approximate) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Applications High Voltage Amplification SOT223 Device Schematic Top View Pin-Out Top View Ordering Information (Note 4) Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTN5551GTA ZXTN5551 7 12 1,000 ZXTN5551GTC ZXTN5551 13 12 4,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See NOT RECOMMENDED FOR NEW DESIGN A Product Line of USE DZT5551 Diodes Incorporated ZXTN5551G Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V 180 V CBO Collector-Emitter Voltage V 160 V CEO Emitter-Base Voltage V 6 V EBO Continuous Collector Current I 600 mA C Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) 2 W P D Thermal Resistance, Junction to Ambient (Note 5) R 62.5 C/W JA Thermal Resistance, Junction to Leads (Note 6) 34.05 C/W R JL Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 5. Device mounted on 50mm X 50mm X 1.6mm FR-4 PCB with high coverage of single sided 1 oz. copper, in still air condition 6. Thermal resistance from junction to solder-point (at the end of the collector lead). 2.00 1 V CE(sat) 1.75 Limited 1.50 50mmx50mmx1.6mm 1oz Copper 100m DC 1.25 1s 1.00 100ms 0.75 Single Pulse 10m 10ms T =25C amb 0.50 1ms 50mmx50mmx1.6mm 0.25 1oz Copper 100s 1m 0.00 110 100 0 20 40 60 80 100 120 140 160 V Collector-Emitter Voltage (V) Temperature (C) CE Safe Operating Area Derating Curve 70 100 Single Pulse T =25C amb 60 T =25C amb 50mmx50mmx1.6mm 1oz Copper 50mmx50mmx1.6mm 50 1oz Copper D=0.5 40 10 30 D=0.2 20 Single Pulse D=0.05 10 D=0.1 0 1 100 1m 10m 100m 1 10 100 1k 100 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Pulse Power Dissipation 2 of 6 November 2012 ZXTN5551G Diodes Incorporated www.diodes.com Document number: DS33671 Rev. 3 - 3 I Collector Current (A) Thermal Resistance (C/W) C Max Power Dissipation (W) Maximum Power (W)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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