A Product Line of Diodes Incorporated ZXTN649F 25V NPN LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data Case: SOT23 BV > 25V CEO BV > 35V forward blocking voltage Case Material: molded plastic, Green molding compound CBO I = 3A high Continuous Collector Current C UL Flammability Classification Rating 94V-0 Low saturation voltage, V < 120mV 1A Moisture Sensitivity: Level 1 per J-STD-020 CE(SAT) R = 77m for a low equivalent On-Resistance CE(SAT) Terminals: Finish Matte Tin Plated Leads, Solderable per 725mW Power dissipation MIL-STD-202, Method 208 h specified up to 6A for high current gain hold up FE Weight 0.008 grams (approximate) Complementary PNP Type: ZXTP749F Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Applications Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability MOSFET gate drivers Power switching in automotive and industrial applications Motor drive and control SOT23 C E C B B E Top View Device Symbol Top View Pin-Out Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTN649FTA 1N7 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See A Product Line of Diodes Incorporated ZXTN649F Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V 35 V CBO Collector-Emitter Voltage V 25 V CEO Emitter-Base Voltage 7 V V EBO Continuous Collector Current 3 A I C Peak Pulse Current 6 A I CM Base Current 500 mA I B Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) P 725 mW D Thermal Resistance, Junction to Ambient (Note 5) R 172 C/W JA Thermal Resistance, Junction to Leads (Note 6) R 79 C/W JL Operating and Storage Temperature Range T T -55 to +150 C J, STG ESD Ratings (Note 7) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 8,000 V 3B Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 6. Thermal resistance from junction to solder-point (at the end of collector lead). 7. Refer to JEDEC specification JESD22-A114 and JESD22-A115. ZXTN649F 2 of 7 January 2013 Document number: DS31900 Rev. 3 - 2 Diodes Incorporated www.diodes.com