X-On Electronics has gained recognition as a prominent supplier of ZXTP03200BGTA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. ZXTP03200BGTA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

ZXTP03200BGTA Diodes Incorporated

Hot ZXTP03200BGTA electronic component of Diodes Incorporated
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Part No.ZXTP03200BGTA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Diodes Incorporated Bipolar Transistors - BJT 200V PNP Low Vce 2A Ic Vceo -200V
Datasheet: ZXTP03200BGTA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3056 ea
Line Total: USD 0.31 
Availability - 677
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
677
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 0.3056
10 : USD 0.2737
30 : USD 0.257
100 : USD 0.2411
500 : USD 0.2319
1000 : USD 0.2269

1053
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.122
10 : USD 0.847
100 : USD 0.6182
500 : USD 0.5137
1000 : USD 0.4906
2000 : USD 0.4532
25000 : USD 0.4422

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ZXTP03200BGTA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXTP03200BGTA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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ZXTP 03 200BG Green 200V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data BV > -200V Case: SOT223 CEO I = -2A High Continuous Collector Current C Case Material: Molded Plastic. Green Molding Compound I = -5A Peak Pulse Current CM UL Flammability Rating 94V-0 Low Saturation Voltage V < -160mV I = -1A CE(sat) C Moisture Sensitivity: Level 1 per J-STD-020 R = 135m for a Low Equivalent On-Resistance SAT Terminals: Finish - Matte Tin Plated Leads, Solderable per Enhanced Switching Performance MIL-STD-202, Method 208 Lead-Free Finish RoHS Compliant (Notes 1 & 2) Weight: 0.112 grams (Approximate) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Applications DC-DC Conversion C SOT223 B E Top View Top View Device Symbol Pin-Out Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTP03200BGTA ZXTP03200B 7 12 1,000 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See ZXTP 03200BG Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -220 V CBO Collector-Emitter Voltage V -200 V CEO Emitter-Base Voltage V -7 V EBO Continuous Collector Current -2 A IC Peak Pulse Current -5 A I CM Base Current -1 A I B Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit (Note 5) 1.25 (Note 6) 1.65 Power Dissipation W PD (Note 7) 3.0 (Note 8) 5.8 (Note 5) 100 (Note 6) 76 Thermal Resistance, Junction to Ambient R JA (Note 7) 41.6 C/W (Note 8) 21.5 Thermal Resistance, Junction to Lead (Note 9) R 10.5 JL Operating and Storage Temperature Range -55 to +150 C T T J, STG ESD Ratings (Note 10) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the collector lead on 15mm x 15mm 1oz. copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in a steady-state. 6. Same as Note 5, except the device is mounted on 25mm x 25mm 1oz. copper. 7. Same as Note 5, except the device is mounted on 50mm x 50mm 2oz. copper. 8. Same as Note 7, except measured at t<5 seconds. 9. Thermal resistance from junction to solder-point (at the end of the collector lead). 10. Refer to JEDEC specification JESD22-A114 and JESD22-A115. ZXTP03200BG 2 of 7 December 2015 Diodes Incorporated Datasheet Number: DS33722 Rev. 2 - 2 www.diodes.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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