ZXTP05120HFF 120V PNP MEDIUM POWER DARLINGTON TRANSISTOR IN SOT23F Features Mechanical Data BV > -120V Case: SOT23F CEO I = -1A Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound. C Saturation Voltage V < -1.1V -1A UL Flammability Classification Rating 94V-0 CE(SAT) h Characterized Up to -6A Moisture Sensitivity: Level 1 per J-STD-020 FE High h (Min) = 3,000 -1A Terminals: Finish Matte Tin Plated Leads, Solderable per FE 1.5W Power Dissipation MIL-STD-202, Method 208 Complementary NPN Type: ZXTN04120HFF Weight: 0.012 grams (Approximate) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Applications This high performance PNP Darlington transistor is designed for Boost Converters applications requiring high gain and very low saturation voltage. The MOSFET and IGBT Gate Drivers SOT23F package is pin compatible with the industry standard SOT23 Lamp and Relay Driver footprint but offers lower profile and higher dissipation for applications Motor Drive where power density is of utmost importance. Siren Driver SOT23F E C B Top View Top View Device Symbol Pin Configuration Ordering Information (Note 4) Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel ZXTP05120HFFTA AEC-Q101 1F7 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZXTP05120HFF Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -140 V CBO Collector-Emitter Voltage -120 V V CEO Emitter-Base Voltage -10 V V EBO Continuous Collector Current -1 A I C Peak Pulse Current -4 A I CM Base Current -0.5 A I B Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 0.84 (Note 5) 6.72 1.34 (Note 6) 10.72 Power Dissipation W P D Linear Derating Factor 1.50 mW/C (Note 7) 12.0 2.0 (Note 8) 16.0 (Note 5) 149 (Note 6) 93 Thermal Resistance, Junction to Ambient C/W R JA (Note 7) 83 (Note 8) 60 (Note 9) Thermal Resistance, Junction to Leads R 43.8 C/W JL Operating and Storage Temperature Range T T -55 to +150 C J, STG ESD Ratings (Note 10) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge Human Body Model ESD HBM 2,000 V 2 Electrostatic Discharge Machine Model ESD MM 200 V B Notes: 5. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in a steady-state. 6. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper. 7. Same as Note 5, except the device is mounted on 50mm x 50mm 2oz copper. 8. Same as Note 7, whilst measured at t < 5 seconds. 9. Thermal resistance from junction to solder-point (at the end of the leads). 10. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 ZXTP01520HFF April 2016 Diodes Incorporated www.diodes.com Document number: DS33723 Rev. 2 - 2