ZXTP07012EFF 12V PNP LOW SATURATION TRANSISTOR IN SOT23F Features Mechanical Data BV > -12V Case: SOT23F CEO I = -4A Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound. C Low Saturation Voltage V < 75mV 1A UL Flammability Classification Rating 94V-0 CE(SAT) R = 50m Moisture Sensitivity: Level 1 per J-STD-020 CE(SAT) h Characterised Up to -6A Terminals: Finish Matte Tin Plated Leads, Solderable per FE High h Min 400 1A MIL-STD-202, Method 208 FE 1.5W Power Dissipation Weight: 0.012 grams (Approximate) Complementary NPN Type: ZXTN07012EFF Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Applications This low voltage PNP transistor has been designed for applications Boost Converters requiring high gain and very low saturation voltage. The SOT23F MOSFET and IGBT Gate Drivers package is pin compatible with the industry standard SOT23 footprint Lamp and Relay Driver but offers lower profile and higher dissipation for applications where Motor Drive power density is of utmost importance. Siren Driver SOT23F C E C B B E Top View Top View Device Symbol Pin Configuration Ordering Information (Note 4) Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel ZXTP07012EFFTA AEC-Q101 1D1 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZXTP07012EFF Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage -12 V V CBO Collector-Emitter Voltage -12 V V CEO Emitter-Base Voltage V -7 V EBO Continuous Collector Current I -4 A C Peak Pulse Current I -8 A CM Base Current I -1 A B Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 0.84 (Note 5) 6.72 1.34 (Note 6) Power Dissipation 10.72 W P D Linear Derating Factor mW/C 1.50 (Note 7) 12.0 2.0 (Note 8) 16.0 (Note 5) 149 (Note 6) 93 Thermal Resistance, Junction to Ambient R C/W JA (Note 7) 83 (Note 8) 60 Thermal Resistance, Junction to Lead (Note 9) 43.8 C/W R JL Operating and Storage Temperature Range -55 to +150 C T T J, STG ESD Ratings (Note 10) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in a steady-state. 6. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper. 7. Same as Note 5, except the device is mounted on 50mm x 50mm 2oz copper. 8. Same as Note 7, whilst measured at t < 5 seconds. 9. Thermal resistance from junction to solder-point (at the end of the collector lead). 10. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 ZXTP07012EFF January 2016 Diodes Incorporated www.diodes.com Document number: DS33727 Rev. 3 - 2