ZXTP08400BFF 400V PNP MEDIUM POWER HIGH VOLTAGE TRANSISTOR IN SOT23F Features Mechanical Data BV > -400V Case: SOT23F CEO BV > -6V ECO Case Material: Molded Plastic. Green Molding Compound. I = -0.2A Continuous Collector Current C UL Flammability Classification Rating 94V-0 Low Saturation Voltage V < -220mV -100mA CE(SAT) Moisture Sensitivity: Level 1 per J-STD-020 h Min 100 -200mA FE Terminals: Finish - Matte Tin Plated Leads, Solderable per 1.5W Power Dissipation MIL-STD-202, Method 208 Complementary NPN Type: ZXTN08400BFF Weight: 0.012 grams (Approximate) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This PNP transistor is designed for applications requiring high blocking voltage. The SOT23F package is pin compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance. C SOT23F E C B B E Top View Top View Device symbol Pin Configuration Ordering Information (Note 4) Product Marking Reel Size (inch) Tape Width (mm) Quantity per Reel ZXTP08400BFFTA 1D6 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZXTP08400BFF Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -400 V CBO Collector-Emitter Voltage V -400 V CEO Emitter-Collector Voltage (Reverse Blocking) V -6 V ECO Emitter-Base Voltage V -7 V EBO Continuous Collector Current I -0.2 A C Peak Pulse Current -1 A ICM Base Current -0.2 A I B Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 0.84 (Note 5) 6.72 1.34 (Note 6) 10.72 Power Dissipation W P D Linear Derating Factor 1.50 mW/C (Note 7) 12.0 2.0 (Note 8) 16.0 (Note 5) 149 (Note 6) 93 Thermal Resistance, Junction to Ambient R C/W JA (Note 7) 83 (Note 8) 60 Thermal Resistance, Junction to Lead (Note 9) 43.8 C/W R JL Operating and Storage Temperature Range -55 to +150 C T T J, STG ESD Ratings (Note 10) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR-4 PCB device is measured under still air conditions whilst operating in a steady-state. 6. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper. 7. Same as Note 5, except the device is mounted on 50mm x 50mm 2oz copper. 8. Same as Note 7, whilst measured at t < 5 seconds. 9. Thermal resistance from junction to solder-point (at the end of the collector lead). 10. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 ZXTP08400BFF September 2016 Diodes Incorporated www.diodes.com Document number: DS33729 Rev. 4 - 2