ZXTP19020CFF 20V PNP LOW SATURATION VOLTAGE TRANSISTOR IN SOT23F Features Mechanical Data BV > -20V Case: SOT23F CEO BV > -5V Case Material: Molded Plastic. Green Molding Compound. ECO I = -5A Continuous Collector Current UL Flammability Classification Rating 94V-0 C I = -10A Peak Pulse Collector Current Moisture Sensitivity: Level 1 per J-STD-020 C Low Saturation Voltage V < -40mV -1A Terminals: Finish Matte Tin Plated Leads, Solderable per CE(SAT) 1.5W Power Dissipation MIL-STD-202, Method 208 Complementary NPN Type: ZXTN19020CFF Weight: 0.012 grams (Approximate) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Applications Description Battery Charging Load Switch This low voltage PNP transistor has been designed for applications DC-DC Converters requiring high gain and very low saturation voltage. The SOT23F package is pin compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance. SOT23F C E C B B E Top View Device Symbol Pin Configuration Top View Ordering Information (Note 4) Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel ZXTP19020CFFTA AEC-Q101 1D7 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZXTP19020CFF Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -25 V CBO Collector-Emitter Voltage V -20 V CEO Emitter-Collector Voltage (Reverse Blocking) -5 V VECO Emitter-Base Voltage -7 V V EBO Continuous Collector Current -5 A I C Peak Pulse Current -10 A I CM Base Current -1 A I B Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 0.84 (Note 5) 6.72 1.34 (Note 6) Power Dissipation 10.72 W P D Linear Derating Factor 1.50 mW/C (Note 7) 12.0 2.0 (Note 8) 16.0 (Note 5) 149 (Note 6) 93.4 Thermal Resistance, Junction to Ambient C/W R JA (Note 7) 83.3 (Note 8) 60 (Note 9) Thermal Resistance, Junction to Lead R 43.8 C/W JL Operating and Storage Temperature Range T T -55 to +150 C J, STG ESD Ratings (Note 10) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR-4 PCB device is measured under still air conditions whilst operating in a steady-state. 6. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper. 7. Same as Note 5, except the device is mounted on 50mm x 50mm 2oz copper. 8. Same as Note 7, whilst measured at t < 5 seconds. 9. Thermal resistance from junction to solder-point (at the end of the collector lead). 10. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 ZXTP19020CFF June 2016 Diodes Incorporated www.diodes.com Document number: DS33730 Rev. 2 - 2