ZXTP19020DFF 20V PNP MEDIUM POWER TRANSISTOR IN SOT23F Features Mechanical Data BV > -20V CEO Case: SOT23F BV > -4V ECO Case Material: Molded Plastic. Green Molding Compound. I = -5.5A Continuous Collector Current C UL Flammability Classification Rating 94V-0 I = -15A Peak Current CM Moisture Sensitivity: Level 1 per J-STD-020 Guaranteed Gain at I of -10A C Terminals: Finish Matte Tin Plated Leads, Solderable per V < -44mV -1A CE(SAT) MIL-STD-202, Method 208 R = 26m CE(SAT) Weight: 0.012 grams (Approximate) 1.5W Power Dissipation Complementary PNP Type: ZXTN19020DFF Applications Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) MOSFET and IGBT Gate Driving Qualified to AEC-Q101 Standards for High Reliability Power Switches Motor Control Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. SOT23F C E B C B E Top View Top View Device Symbol Pin Configuration Ordering Information (Note 4) Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel ZXTP19020DFFTA AEC-Q101 1D8 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZXTP19020DFF Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -25 V CBO Collector-Emitter Voltage (Base Open) V -20 V CEO Emitter Collector Voltage (Reverse Blocking) V -4 V ECO Emitter-Base Voltage V -7 V EBO Continuous Collector Current I -5.5 A C Peak Pulse Current -15 A ICM Base Current -1 A I B Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 0.84 (Note 5) 6.72 1.34 (Note 6) Power Dissipation 10.72 W P D Linear Derating Factor mW/C 1.50 (Note 7) 12.0 2.0 (Note 8) 16.0 (Note 5) 149 (Note 6) 93 Thermal Resistance, Junction to Ambient C/W R JA (Note 7) 83 (Note 8) 60 (Note 9) Thermal Resistance, Junction to Lead R 43.8 C/W JL Operating and Storage Temperature Range T T -55 to +150 C J, STG ESD Ratings (Note 10) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in a steady-state. 6. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper. 7. Same as Note 5, except the device is mounted on 50mm x 50mm 2oz copper. 8. Same as Note 7, whilst measured at t < 5 seconds. 9. Thermal resistance from junction to solder-point (at the end of the collector lead). 10. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 ZXTP19020DFF April 2017 Diodes Incorporated www.diodes.com Document number: DS33731 Rev. 2 - 2