ZXTP19060CFF 60V PNP MEDIUM POWER TRANSISTOR Features Mechanical Data BV > -60V Case: SOT23F CEO I = -4A Continuous Collector Current C Case Material: Molded Plastic. Green Molding Compound. Low Saturation Voltage V < -75mV 1A CE(sat) UL Flammability Classification Rating 94V-0 R = 45m CE(sat) Moisture Sensitivity: Level 1 per J-STD-020 h Characterised up to 4A FE Terminals: Finish - Matte Tin Plated Leads, Solderable per High h Min 160 1A FE MIL-STD-202, Method 208 1.5W Power Dissipation Weight: 0.012 grams (Approximate) Complementary NPN type: ZXTN19060CFF Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Applications Description High-Side Driver This medium voltage PNP transistor is designed for applications Motor Drive requiring high-gain and low-saturation voltage. The SOT23F package Load Disconnect Switch is PIN compatible with the industry standard SOT23 footprint while offering a lower profile and higher power dissipation for applications where power density is of utmost importance. C SOT23F E C B B E Top View Top View Device Symbol Pin Configuration Ordering Information (Note 4) Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTP19060CFFTA AEC-Q101 1D9 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZXTP19060CFF Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage -60 V V CBO Collector-Emitter Voltage -60 V V CEO Emitter-Collector Voltage (Reverse Blocking) -7 V V ECO Emitter-Base Voltage -7 V V EBO Continuous Collector Current I -4 A C Peak Pulse Current I -7 A CM Base Current I -1 A B Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 0.84 (Note 5) 6.72 1.34 (Note 6) 10.72 Power Dissipation W P D Linear Derating Factor 1.50 mW/C (Note 7) 12.0 2.0 (Note 8) 16.0 (Note 5) 149 (Note 6) 93 Thermal Resistance, Junction to Ambient R C/W JA (Note 7) 83 (Note 8) 60 Thermal Resistance, Junction to Lead (Note 9) 43.77 C/W R JL Operating and Storage Temperature Range -55 to +150 C T T J, STG ESD Ratings (Note 10) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in a steady-state. 6. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper. 7. Same as Note 5, except the device is mounted on 50mm x 50mm 2oz copper. 8. Same as Note 7, whilst measured at t < 5 seconds. 9. Thermal resistance from junction to solder-point (at the end of the collector lead). 10. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 ZXTP19060CFF September 2016 Diodes Incorporated www.diodes.com Document number: DS33734 Rev. 3 - 2