ZXTP19100CFF 100V PNP MEDIUM POWER TRANSISTOR IN SOT23F Features Mechanical Data BV > -100V Case: SOT23F CEO BV > -7V Case Material: Molded Plastic. Green Molding Compound. ECO I = -2A Continuous Collector Current UL Flammability Classification Rating 94V-0 C Saturation Voltage V < -120mV -1A Moisture Sensitivity: Level 1 per J-STD-020 CE(SAT) h Characterised Up to -2A Terminals: Finish Matte Tin Plated Leads, Solderable per FE R = 95m MIL-STD-202, Method 208 CE(SAT) 1.5W Power Dissipation Weight: 0.012 grams (Approximate) Complementary NPN Type: ZXTN19100CFF Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Applications This low saturation 100V PNP transistor offers extremely low on-state Boost Converters losses, making it ideal for use in DC-DC circuits and various driving MOSFET and IGBT Gate Drivers and power management functions. The SOT23F package is pin Lamp and Relay Driver compatible with the industry standard SOT23 footprint, but offers Motor Drive lower profile and higher dissipation for applications where power Siren Driver density is of utmost importance. SOT23F C E B C B E Top View Top View Device Symbol Pin Configuration Ordering Information (Note 4) Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel ZXTP19100CFFTA AEC-Q101 1E1 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZXTP19100CFF Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -110 V CBO Collector-Emitter Voltage (Forward blocking) V -110 V CEX Collector-Emitter Voltage -100 V VCEO Emitter-Collector Voltage (Reverse blocking) -7 V V ECO Emitter-Base Voltage -7 V V EBO Continuous Collector Current -2 A I C Peak Pulse Current -3 A I CM Base Current -1 A I B Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 0.84 (Note 5) 6.72 1.34 (Note 6) Power Dissipation 10.72 W P D Linear Derating Factor 1.50 mW/C (Note 7) 12.0 2.0 (Note 8) 16.0 (Note 5) 149 (Note 6) 93 Thermal Resistance, Junction to Ambient C/W R JA (Note 7) 83 (Note 8) 60 Thermal Resistance, Junction to Lead (Note 9) R 43.8 C/W JL Operating and Storage Temperature Range T T -55 to +150 C J, STG ESD Ratings (Note 10) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in a steady-state. 6. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper. 7. Same as Note 5, except the device is mounted on 50mm x 50mm 2oz copper. 8. Same as Note 7, whilst measured at t < 5 seconds. 9.Thermal resistance from junction to solder-point (at the end of the collector lead). 10. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 ZXTP19100CFF September 2016 Diodes Incorporated www.diodes.com Document number: DS33737 Rev. 2 - 2