ZXTP2008ZQ 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR Description Mechanical Data This bipolar junction transistor (BJT) is designed to meet the stringent Case: SOT89 requirement of automotive applications. Case Material: Molded Plastic. Green Molding Compound. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: FinishMatte Tin Plated Leads. Solderable per MIL- STD-202, Method 208 Weight: 0.05 grams (Approximate) Features Applications BVCEO > -30V DC-DC Converters IC = -5.5A Continuous Collector Current MOSFET Gate Drivers ICM = -20A Peak Pulse Current Charging Circuits Low Saturation Voltage VCE(SAT) < -60mV Max -1A Power Switches RSAT = 24m -5.5A for Low Equivalent On-Resistance Motor Control Exceptional Gain Linearity Down to -10mA hFE Specified up to -20A for High Gain Hold Up Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) SOT89 E C C B Device Schematic Pin-Out Top View Top View Ordering Information (Notes 4 and 5) Part Number Marking Reel Size (inches) Tape Width (mm) Quantity per Reel ZXTP2008ZQTA 949 7 12 1000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See ZXTP2008ZQ Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -50 V CBO Collector-Emitter Voltage V -30 V CEO Emitter-Base Voltage V -7 V EBO Continuous Collector Current -5.5 A IC Peak Pulse Current -20 A I CM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 1.5 (Note 6) 12 Power Dissipation W P D Linear Derating Factor 2.1 mW/C (Note 7) 16.8 (Note 6) 83 RJA Thermal Resistance, Junction to Ambient (Note 7) 60 C/W R JA Thermal Resistance, Junction to Lead (Note 8) 3.23 R JL Operating and Storage Temperature Range -55 to +150 C T T J, STG ESD Ratings (Note 9) Characteristic Symbol Value Unit JEDEC Class Electrostatic DischargeHuman Body Model ESD HBM 4000 V 3A Electrostatic DischargeMachine Model ESD MM 400 V C Notes: 6. For a device mounted with the collector lead on 25mm 25mm 1oz copper that is on a single-sided 1.6mm FR-4 PCB device is measured under still air conditions while operating in steady-state. 7. Same as Note 5, except the device is mounted on 50mm 50mm 1oz copper. 8. Thermal resistance from junction to solder-point (at the end of the collector lead). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 October 2018 ZXTP2008ZQ Diodes Incorporated www.diodes.com Document number: DS40910 Rev. 1 - 2