ZXTP2009ZTA Diodes Incorporated

ZXTP2009Z 40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BV = -40V : R = 29m I = -5.5A CEO SAT C DESCRIPTION Packaged in the SOT89 outline this new low saturation 40V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line switching and various driving and power management functions. FEATURES Extremely low equivalent on-resistance 5.5 amps continuous current Up to 15 amps peak current Very low saturation voltages < -60mV -1A APPLICATIONS DC - DC converters MOSFET gate drivers Charging circuits Power switches Motor control PINOUT ORDERING INFORMATION DEVICE REEL TAPE QUANTITY PER SIZE WIDTH REEL ZXTP2009ZTA 7 12mm 1,000 units DEVICE MARKING 53Z TOP VIEW ISSUE 1 - JUNE 2005 1 SEMICONDUCTORS SOT89ZXTP2009Z ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Collector-base voltage BV -50 V CBO Collector-base voltage BV -50 V CBS Collector-emitter voltage BV -40 V CEO Emitter-base voltage BV -7.5 V EBO (b) Continuous collector current I -5.5 A C Peak pulse current I -15 A CM (a) Power dissipation at T =25C P 0.9 W A D Linear derating factor 7.2 mW/C (b) Power dissipation at T =25C P 1.5 W A D Linear derating factor 12 mW/C (c) Power dissipation at T =25C P 2.1 W A D Linear derating factor 16.8 mW/C (d) Power dissipation at T =25C P 3 W A D Linear derating factor 24 mW/C Operating and storage temperature range T,T -55 to 150 C j stg THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT (a) Junction to ambient R 139 C/W JA (b) Junction to ambient R 83 C/W JA (c) Junction to ambient R 60 C/W JA (d) Junction to ambient R 42 C/W JA NOTES (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (c) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (d) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB measured at t 5 secs. ISSUE 1 - JUNE 2005 2 SEMICONDUCTORS